STB40N60M2 - 650V 40A N-Channel Power MOSFET | STMicroelectronics
MPN: STB40N60M2 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.42 | $3.42 |
| 10 | $3.08 | $30.80 |
| 100 | $2.74 | $274.00 |
| 500 | $2.47 | $1,235.00 |
| 1,000 | $2.19 | $2,190.00 |
Drop-in alternatives for STB40N60M2 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
STB40N60M2-EP
β Drop-Inπ Reference alternative (not in catalog)
STB40N60M2-1
β Drop-Inπ Reference alternative (not in catalog)
IPW60R040CFD7
β Drop-Inπ Reference alternative (not in catalog)
FCH40N60
β Drop-Inπ Reference alternative (not in catalog)
TK40A65W
β Drop-Inπ Reference alternative (not in catalog)
STB40N60M2 Maximum Ratings & Electrical Characteristics
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 650 V |
| Continuous Drain Current (ID) at 25Β°C | 40 A |
| Continuous Drain Current (ID) at 100Β°C | 25 A |
| Pulsed Drain Current (IDM) | 160 A |
| Gate-Source Voltage (VGS) | Β±25 V |
| On-Resistance (RDS(on)) | 0.095 ohm (typical) |
| Total Gate Charge (Qg) | 60 nC (typical) |
| Input Capacitance (Ciss) | 2200 pF (typical) |
| Output Capacitance (Coss) | 150 pF (typical) |
| Reverse Transfer Capacitance (Crss) | 10 pF (typical) |
| Power Dissipation (PD) | 250 W |
| Operating Temperature Range | -55Β°C to +150Β°C |
| Package | D2PAK (TO-263) |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
STB40N60M2 Pin Configuration
| Pin 1 | Gate β Gate drive input |
| Pin 2 | Drain β Drain connection (tab) |
| Pin 3 | Source β Source connection |
Safe Operating Area
Typical Applications
STB40N60M2 is suitable for 6 applications: Switch-Mode Power Supplies (SMPS), Power Factor Correction (PFC), Solar Inverters, Motor Control, Electric Vehicle Chargers, Welding Equipment.
Switch-Mode Power Supplies (SMPS)
The STB40N60M2 is ideal for SMPS topologies such as flyback and forward converters. Its 650V breakdown voltage allows it to handle high input voltages, while the low on-resistance (0.095 ohm) minimizes conduction losses, improving efficiency. In a typical flyback converter, the MOSFET switches at frequencies up to 100 kHz, and its fast switching times reduce switching losses. The D2PAK package's low thermal resistance enables effective heat dissipation when mounted on a suitable copper area. Compared to IGBTs, the MOSFET offers faster switching and lower losses at moderate frequencies, making it a preferred choice for power supplies up to 500W.
Recommended
Power Factor Correction (PFC)
In boost PFC circuits, the STB40N60M2 operates at high switching frequencies (typically 50-100 kHz) to shape the input current waveform. Its low gate charge (60 nC) reduces gate drive losses, and the fast body diode minimizes reverse recovery losses. The 650V rating provides ample margin for the boosted output voltage (typically 400V). The device's avalanche ruggedness ensures reliability during transient overvoltage events. Using this MOSFET in a continuous conduction mode (CCM) PFC stage can achieve efficiency above 95%.
Recommended
Solar Inverters
The STB40N60M2 is suitable for DC-AC inverters in photovoltaic systems. Its high voltage rating (650V) accommodates the DC bus voltage from solar panels (typically up to 600V). The low on-resistance reduces conduction losses, improving overall system efficiency. In a full-bridge inverter, the MOSFET's fast switching enables high-frequency PWM, reducing the size of output filters. The device's thermal performance allows operation in outdoor environments with proper heatsinking. Compared to IGBTs, the MOSFET offers lower losses at lower power levels (up to 5kW), making it a cost-effective choice for residential solar inverters.
Recommended
Motor Control
In motor drives, the STB40N60M2 is used in the inverter stage to drive AC or BLDC motors. Its 40A current capability supports motors up to several kilowatts. The fast switching speed enables high-frequency PWM, reducing motor noise and improving control accuracy. The device's low on-resistance minimizes heat generation, allowing compact designs. In a three-phase inverter, six MOSFETs are used, and the STB40N60M2's avalanche rating ensures robustness during motor regeneration. The D2PAK package is suitable for PCB mounting with proper thermal vias.
Recommended
Electric Vehicle Chargers
The STB40N60M2 is used in on-board chargers for electric vehicles, where high efficiency and reliability are critical. Its 650V rating handles the AC input voltage (up to 480V) and the boosted DC bus. The low on-resistance reduces losses, improving charging efficiency and reducing cooling requirements. The device's fast switching enables high-frequency operation, reducing the size of transformers and inductors. In a bridgeless PFC or LLC converter, the MOSFET's performance is essential for meeting efficiency standards such as 94% efficiency. The D2PAK package is suitable for automotive-grade designs when derated appropriately.
Recommended
Welding Equipment
In inverter-based welding machines, the STB40N60M2 is used in the high-frequency switching stage to convert DC to AC for the welding arc. Its high current capability (40A) and voltage rating (650V) make it suitable for the demanding conditions. The low on-resistance reduces power losses, improving efficiency and reducing heat sink size. The device's ruggedness ensures reliable operation under short-circuit conditions. In a typical welding inverter, the MOSFET operates at 50-100 kHz, and its fast switching enables precise control of the welding current.
Recommended
Recommended Products Summary
Engineering reference data for STB40N60M2 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | STB40N60M2-EP | IPW60R040CFD7 | FCH40N60 |
|---|---|---|---|---|
| Package | D2PAK (TO-263) | D2PAK (TO-263) - same | D2PAK (TO-263) - same | D2PAK (TO-263) - same |
| Brand | STMicroelectronics | STMicroelectronics | Infineon | onsemi |
| Drain-Source Voltage (VDS) | 650 V | 650 V | 650 V | 600 V |
| Continuous Drain Current (ID) at 25Β°C | 40 A | 40 A | 40 A | 40 A |
| On-Resistance (RDS(on)) | 0.095 ohm | 0.095 ohm | 0.040 ohm | 0.11 ohm |
| Total Gate Charge (Qg) | 60 nC | 60 nC | 45 nC | 70 nC |
| Power Dissipation (PD) | 250 W | 250 W | 250 W | 250 W |
| Avalanche Ruggedness | Standard | Enhanced | Standard | Standard |
Key Differentiators
- Low on-resistance (0.095 ohm) for high efficiency (vs FCH40N60)
- 650V breakdown voltage for higher voltage margins (vs FCH40N60)
- Enhanced avalanche ruggedness option (STB40N60M2-EP) (vs IPW60R040CFD7)
Design Notes
The STB40N60M2 can dissipate up to 250W, but this requires a low thermal resistance path. The D2PAK package's exposed tab must be soldered to a large copper area (at least 1 square inch) on the PCB. Use multiple thermal vias to connect to inner layers. For continuous operation at high currents, consider a heatsink attached to the tab. The junction-to-case thermal resistance is typically 0.5Β°C/W, and the junction-to-ambient is around 62Β°C/W without a heatsink.
Place the gate drive circuit close to the MOSFET to minimize parasitic inductance. Use a gate resistor (typically 10-22 ohm) to control switching speed and reduce ringing. The source pin should have a Kelvin connection to the gate driver to avoid voltage drops in the power path. For high-frequency operation, keep the drain and source traces short and wide to minimize inductance.
Do not exceed the maximum gate-source voltage of Β±25V. Use a zener diode or TVS for protection if the gate drive can overshoot. Ensure the drain-source voltage does not exceed 650V, especially during transients. The device is avalanche-rated, but repeated avalanche events can reduce lifetime. For parallel operation, use a small gate resistor in each gate to prevent oscillations.
Compliance Information
RoHS compliant per STMicroelectronics product page. Not AEC-Q101 qualified; for automotive, consider STB40N60M2-EP or other AEC-Q101 parts.