STB9N60M2 - 600V N-Channel Power MOSFET | STMicroelectronics
MPN: STB9N60M2 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.25 | $1.25 |
| 10 | $1.12 | $11.20 |
| 100 | $0.98 | $98.00 |
| 500 | $0.87 | $435.00 |
| 1,000 | $0.79 | $790.00 |
Drop-in alternatives for STB9N60M2 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
STB9N60M2-EP
β Drop-Inπ Reference alternative (not in catalog)
STB9N60M2-EP
β Drop-Inπ Reference alternative (not in catalog)
STB9N60M2 Maximum Ratings & Electrical Characteristics
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID) at 25Β°C | 7 A |
| Continuous Drain Current (ID) at 100Β°C | 4.4 A |
| Pulsed Drain Current (IDM) | 28 A |
| Gate-Source Voltage (VGS) | Β±30 V |
| On-Resistance (RDS(on)) typical | 0.55 ohm |
| On-Resistance (RDS(on)) max | 0.65 ohm |
| Total Gate Charge (Qg) | 18 nC |
| Input Capacitance (Ciss) | 560 pF |
| Output Capacitance (Coss) | 45 pF |
| Reverse Transfer Capacitance (Crss) | 2.5 pF |
| Avalanche Energy (EAS) | 300 mJ |
| Operating Junction Temperature | -55Β°C to +150Β°C |
| Package | D2PAK (TO-263) |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
STB9N60M2 Pin Configuration
| Pin 1 | Gate (G) β Gate terminal for controlling the MOSFET |
| Pin 2 | Drain (D) β Drain terminal, also connected to the tab |
| Pin 3 | Source (S) β Source terminal |
Safe Operating Area (DC)
Typical Applications
STB9N60M2 is suitable for 6 applications: Switch-Mode Power Supplies (SMPS), Power Factor Correction (PFC), LED Lighting Drivers, Industrial Motor Control, Solar Inverters, Battery Chargers.
Switch-Mode Power Supplies (SMPS)
The STB9N60M2 is ideal for SMPS primary-side switching. Its 600V rating handles universal input (85-265V AC) with margin, and the low on-resistance (0.55 ohm) minimizes conduction losses, improving efficiency. The low gate charge (18 nC) enables fast switching, reducing switching losses at high frequencies. In a typical flyback converter, the MOSFET switches at 100 kHz, and the fast body diode reduces reverse recovery losses. Proper snubber circuits may be needed to manage voltage spikes from transformer leakage inductance.
Recommended
Power Factor Correction (PFC)
In boost PFC circuits, the STB9N60M2 operates at high switching frequencies (typically 100-200 kHz) to shape the input current waveform. Its low gate charge and fast switching reduce switching losses, while the 600V rating provides headroom for output voltages up to 400V. The avalanche ruggedness (300 mJ) ensures survival during transient overvoltages. A continuous conduction mode (CCM) PFC design with this MOSFET can achieve efficiency above 95%.
Recommended
LED Lighting Drivers
The STB9N60M2 is used in LED drivers for street lighting and industrial lighting. Its high voltage rating (600V) allows direct connection to rectified AC mains, and the low on-resistance reduces power dissipation, enabling compact designs without large heatsinks. The fast switching supports PWM dimming at high frequencies without audible noise. In a typical buck LED driver, the MOSFET switches at 200 kHz, and the low gate charge simplifies the gate drive circuit.
Recommended
Industrial Motor Control
In variable frequency drives (VFDs) and servo drives, the STB9N60M2 is used in the inverter stage to drive three-phase motors. Its 600V rating is suitable for 380V AC industrial supplies, and the fast switching reduces losses in PWM operation. The low on-resistance minimizes conduction losses, improving overall drive efficiency. The device's ruggedness against avalanche ensures reliability during motor regenerative braking. Proper gate drive isolation and dead-time control are essential.
Recommended
Solar Inverters
The STB9N60M2 is used in microinverters and string inverters for DC-AC conversion. Its 600V rating handles the high DC bus voltage from solar panels (up to 500V), and the low on-resistance reduces losses, improving conversion efficiency. The fast switching enables high-frequency operation, reducing the size of magnetic components. In a typical H-bridge inverter, the MOSFETs switch at 20 kHz, and the low gate charge simplifies the gate drive design.
Recommended
Battery Chargers
In battery chargers for electric vehicles and industrial equipment, the STB9N60M2 is used in the power stage to convert AC to DC. Its 600V rating handles the input voltage, and the low on-resistance reduces losses, improving charging efficiency. The fast switching supports high-frequency operation, reducing charger size. The device's thermal performance in D2PAK package allows for compact designs with adequate PCB copper area.
Recommended
Recommended Products Summary
Engineering reference data for STB9N60M2 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | STB9N60M2-1 | STB9N60M2-EP | IPP60R099CP | FCP7N60 |
|---|---|---|---|---|---|
| Package | D2PAK (TO-263) | TO-220 | D2PAK (TO-263) | TO-220 | TO-220 |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics | Infineon | onsemi |
| Drain-Source Voltage (VDS) | 600 V | 600 V | 600 V | 600 V | 600 V |
| Continuous Drain Current (ID) at 25Β°C | 7 A | 7 A | 7 A | 7 A | 7 A |
| On-Resistance (RDS(on)) typical | 0.55 ohm | 0.55 ohm | 0.45 ohm | 0.099 ohm | 0.55 ohm |
| Total Gate Charge (Qg) | 18 nC | 18 nC | 15 nC | 20 nC | 18 nC |
| Avalanche Energy (EAS) | 300 mJ | 300 mJ | 350 mJ | 250 mJ | 300 mJ |
| Operating Junction Temperature | -55Β°C to +150Β°C | -55Β°C to +150Β°C | -55Β°C to +150Β°C | -55Β°C to +150Β°C | -55Β°C to +150Β°C |
Key Differentiators
- Low on-resistance (0.55 ohm) reduces conduction losses (vs IPP60R099CP)
- High avalanche energy (300 mJ) ensures robustness (vs FCP7N60)
- D2PAK package for surface-mount assembly (vs STB9N60M2-1)
Design Notes
The D2PAK package has a junction-to-ambient thermal resistance of 62.5Β°C/W. At 7A and 0.55 ohm, power dissipation is approximately 27W, which would cause a temperature rise of 1687Β°C without a heatsink. Therefore, a heatsink or large copper area is mandatory for continuous operation at high currents. For example, at 3A, dissipation is 5W, requiring a heatsink with thermal resistance below 20Β°C/W to keep junction temperature below 150Β°C at 25Β°C ambient.
Place the gate drive circuit close to the MOSFET to minimize parasitic inductance. Use a gate resistor (typically 10-100 ohm) to control switching speed and reduce EMI. Ensure the source pin has a low-inductance path to the controller ground. For high-frequency operation, use a Kelvin source connection if available to reduce gate drive loop inductance.
Do not exceed the maximum gate-source voltage of Β±30V. Use a zener diode or TVS for gate protection if the gate drive can overshoot. Also, ensure the drain-source voltage does not exceed 600V, especially during switching transients. An RC snubber across the drain-source may be needed to limit voltage spikes in inductive load switching.
Compliance Information
RoHS compliant per STMicroelectronics. AEC-Q100 not applicable for discrete MOSFETs. Lead-free finish.