10M08DCF256I7G vs 10M08DCF256C8G Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci 10M08DCF256I7G disebabkan oleh Intel dan 10M08DCF256C8G disebabkan oleh Intel. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | 10M08DCF256I7G | 10M08DCF256C8G |
|---|---|---|
| Merek | Intel | Intel |
| Kategori | FPGA & CPLD | FPGA & CPLD |
| Status Lingkungan Hidup | Aktif | Aktif |
| Series | MAX 10 | MAX 10 |
| Family | MAX 10 FPGA | — |
| Logic Elements (LE) | 8,000 | — |
| Embedded Memory (bits) | 387,072 | 387,072 (378 Kbits user flash + block SRAM) |
| User I/O Count | 178 | 178 |
| DSP Blocks (18x18) | [DATA_NEEDED: 18x18 multiplier count] | — |
| Kemasan | 256-FBGA (FineLine BGA) | 256-LBGA (F256, FineLine BGA) |
| Jenis Pemasangan | Surface Mount | Surface Mount (BGA) |
| Suhu Operasi | -40C to +100C (Industrial) | 0C to +85C (commercial) |
| Supply Voltage - Core | [DATA_NEEDED: core voltage range] | — |
| Supply Voltage - I/O Banks | 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.3 V (bank-dependent) | — |
| Configuration Memory | On-chip dual-configuration flash (non-volatile) | — |
| On-die ADC | 12-bit, up to 1 MSa/s | — |
| External Memory Interface | LPDDR2 / DDR3 / DDR3L | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Process Technology | 55 nm NOR-flash-backed CMOS | TSMC 55 nm embedded flash CMOS |
| Logic Elements | — | 8,000 |
| Pitch | — | 1.0 mm |
| Speed Grade | — | C8 (commercial, slowest speed bin) |
| Core Voltage (VCCINT) | — | 1.2 V |
| I/O Bank Voltage (VCCIO) | — | 1.2 V to 3.3 V (per bank) |
| Configuration | — | Internal flash (instant-on, non-volatile) |
| ADC | — | Dual 12-bit SAR, up to 17 analog inputs |
| 18x18 Multipliers | — | 8 |
| PLLs | — | 2 |
| Global Clock Networks | — | 4 |
| Design Software | — | Intel Quartus Prime (Lite / Standard / Pro) |
| Aras MSL | — | 3 (168 hours) |