10M08DCF256I7G vs 10M08DCF256C8G 比較
詳細並排比較 10M08DCF256I7G 由 Intel 與 10M08DCF256C8G 由 Intel. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | 10M08DCF256I7G | 10M08DCF256C8G |
|---|---|---|
| 品牌 | Intel | Intel |
| 類別 | FPGA & CPLD | FPGA & CPLD |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Series | MAX 10 | MAX 10 |
| Family | MAX 10 FPGA | — |
| Logic Elements (LE) | 8,000 | — |
| Embedded Memory (bits) | 387,072 | 387,072 (378 Kbits user flash + block SRAM) |
| User I/O Count | 178 | 178 |
| DSP Blocks (18x18) | [DATA_NEEDED: 18x18 multiplier count] | — |
| 封裝 | 256-FBGA (FineLine BGA) | 256-LBGA (F256, FineLine BGA) |
| 安裝類型 | Surface Mount | Surface Mount (BGA) |
| 工作溫度 | -40C to +100C (Industrial) | 0C to +85C (commercial) |
| Supply Voltage - Core | [DATA_NEEDED: core voltage range] | — |
| Supply Voltage - I/O Banks | 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.3 V (bank-dependent) | — |
| Configuration Memory | On-chip dual-configuration flash (non-volatile) | — |
| On-die ADC | 12-bit, up to 1 MSa/s | — |
| External Memory Interface | LPDDR2 / DDR3 / DDR3L | — |
| RoHS 狀態 | Compliant | Compliant |
| Lead-Free | Yes | — |
| Process Technology | 55 nm NOR-flash-backed CMOS | TSMC 55 nm embedded flash CMOS |
| Logic Elements | — | 8,000 |
| Pitch | — | 1.0 mm |
| Speed Grade | — | C8 (commercial, slowest speed bin) |
| Core Voltage (VCCINT) | — | 1.2 V |
| I/O Bank Voltage (VCCIO) | — | 1.2 V to 3.3 V (per bank) |
| Configuration | — | Internal flash (instant-on, non-volatile) |
| ADC | — | Dual 12-bit SAR, up to 17 analog inputs |
| 18x18 Multipliers | — | 8 |
| PLLs | — | 2 |
| Global Clock Networks | — | 4 |
| Design Software | — | Intel Quartus Prime (Lite / Standard / Pro) |
| MSL 等級 | — | 3 (168 hours) |