10M08SAE144I7G vs 10M08SAE144C8G Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 10M08SAE144I7G disebabkan oleh Intel dan 10M08SAE144C8G disebabkan oleh Intel. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 10M08SAE144I7G 10M08SAE144C8G
Merek Intel Intel
Kategori FPGA & CPLD FPGA & CPLD
Status Lingkungan Hidup Aktif Aktif
Family MAX 10 MAX 10
Logic Elements (LE) 8000 8000
Total RAM Bits 387072 (378 Kb) —
User Flash Memory 1540 Kb (dual-configuration) —
User I/O Pins 101 101
Tegangan Pemberi Arus 2.85 V to 3.465 V —
Core Voltage 3.3 V (single supply) —
Suhu Operasi -40°C to +100°C (TJ) —
Jenis Pemasangan Surface Mount Surface Mount (LQFP)
Kemasan 144-LQFP Exposed Pad (EQFP-144) 144-LQFP Exposed Pad (EQFP)
Supplier Device Package 144-EQFP EP —
Process Technology TSMC 55 nm CMOS 55 nm flash-based CMOS
Embedded Memory Type M9K SRAM blocks —
Multipliers (18x18) [DATA_NEEDED: multiplier block count] —
Integrated ADC Yes, 12-bit SAR 12-bit, 1 MSa/s, up to 17 analog inputs
Configuration Method JTAG / internal flash (instant-on) —
Soft Core Support Nios II —
Status RoHS Compliant Compliant
Aras MSL [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
Adaptive Logic Modules (ALM) — Not applicable (MAX 10 uses LE architecture, not ALM)
M9K Embedded Memory Blocks — 378 Kb total
MLAB Memory — [DATA_NEEDED: MLAB capacity]
Embedded 18x18 Multipliers — 24
Configuration Memory — Internal flash, dual-image
PLLs — 2 analog front-end PLLs
Maximum User I/O Voltage — 3.3 V (LVCMOS/LVTTL); LVDS supported
External Memory Interface — DDR3, DDR2, LPDDR2
Suhu Hubungan Operasi — 0C to 85C (commercial)
Lead-Free — Yes
Boson Bebas — [DATA_NEEDED: halogen status]

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