1ED3127MU12FXUMA1 vs 1EDN7116GXTMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 1ED3127MU12FXUMA1 disebabkan oleh Infineon dan 1EDN7116GXTMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 1ED3127MU12FXUMA1 1EDN7116GXTMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Fungsi Single-channel isolated gate driver Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs
Bilangan Output 1 —
Konfigurasi Output High-side / Low-side, Inverting / Non-Inverting —
Peak Output Current 10 A (source/sink) —
Continuous Output Current 9 A —
Supply Voltage (VCC2 secondary) 12 V to 35 V —
Supply Voltage (VCC1 primary) 3 V to 5.5 V —
Propagation Delay (typ.) 15 ns —
Delay Matching (typ.) 30 ns —
Galvanic Isolation 3000 Vrms (coreless transformer) —
Gambaran Suhu Operasi -40C to +125C -40 °C to +125 °C
Protection Features Miller clamp, UVLO, DESAT short-circuit protection —
Kemasan PG-DSO-8-72 (SOIC-8 wide-body) PG-VSON-10-4 (3.0 mm × 3.0 mm)
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant Compliant
Drives IGBT, MOSFET, SiC MOSFET —
Driver Configuration — Non-inverting, single low-side
Number of Drivers — 1
Peak Source Current — 2 A (typ)
Peak Sink Current — 4 A (typ)
Input Type — Truly Differential Input (TDI)
Supply Voltage (VCC) — 4.5 V to 5.5 V
Switch-Node Blocking Voltage — 200 V (max)
Propagation Delay (Typ) — 9 ns
Rise Time (Typ) — 3 ns
Fall Time (Typ) — 3 ns
Quiescent Current (Typ) — 0.6 mA
Miller Clamp — Integrated, active
UVLO — Yes (VCC and gate-rail monitored)
Aras MSL — MSL3
Target Switch Technology — GaN HEMT (CoolGaN) or Si MOSFET

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