1EDN8511BXUSA1 vs 1EDB8275FXUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 1EDN8511BXUSA1 disebabkan oleh Infineon dan 1EDB8275FXUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 1EDN8511BXUSA1 1EDB8275FXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Channel Count 1 —
Driver Configuration Low-side —
Peak Source Current 4 A —
Peak Sink Current 8 A —
Input Stage Inverting and non-inverting —
Propagation Delay Accuracy [DATA_NEEDED: typical propagation delay] —
UVLO Threshold 8 V —
Driver Supply Voltage (VCC) [DATA_NEEDED: VCC range upper limit] —
Suhu Hubungan Operasi -40 °C to +150 °C —
Kemasan PG-SOT23-6-2 PG-DSO-8 (150 mil wide-body)
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 6 —
Logic Input Compatibility TTL / CMOS —
Target Switch Type Power MOSFET, GaN HEMT —
Status RoHS Compliant Compliant
Aras MSL [DATA_NEEDED: MSL rating] —
Fungsi — Single-channel isolated gate driver
Number of Channels — 1
Isolation Type — Magnetic coupling (coreless transformer)
Isolation Voltage (Vrms) — 3000 Vrms
Peak Source Current (typ.) — 5.4 A
Peak Sink Current (typ.) — 9.8 A
CMTI (min.) — 300 V/ns
Propagation Delay (typ.) — [DATA_NEEDED: propagation delay value]
Output-side Supply Voltage — Up to 40 V (per datasheet family)
Input-side Supply Voltage — [DATA_NEEDED: VCC input range]
UVLO — Yes (input and output side)
Miller Clamp — Available in family
Gambaran Suhu Operasi — -40 C to +125 C (industrial)

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