2ED21834S06JXUMA1 vs 1EDB8275FXUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 2ED21834S06JXUMA1 disebabkan oleh Infineon dan 1EDB8275FXUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 2ED21834S06JXUMA1 1EDB8275FXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Product Type Half-Bridge Gate Driver IC —
Configuration Half-bridge (high-side + low-side) —
Maximum Offset Voltage (VBS) 650 V —
Typical Sink Current 2.5 A —
Typical Source Current 2.5 A —
Input Logic Non-Inverting —
Integrated Bootstrap Diode Yes —
Technology SOI (Silicon-On-Insulator) high-voltage —
Under-Voltage Lockout (UVLO) Yes (VCC and VBS) —
Kemasan PG-DSO-14-49 (DSO-14) PG-DSO-8 (150 mil wide-body)
Bilangan Pin 14 —
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -40 °C to +125 °C -40 C to +125 C (industrial)
Status RoHS Compliant Compliant
Standard Reel Quantity 3000 —
Fungsi — Single-channel isolated gate driver
Number of Channels — 1
Isolation Type — Magnetic coupling (coreless transformer)
Isolation Voltage (Vrms) — 3000 Vrms
Peak Source Current (typ.) — 5.4 A
Peak Sink Current (typ.) — 9.8 A
CMTI (min.) — 300 V/ns
Propagation Delay (typ.) — [DATA_NEEDED: propagation delay value]
Output-side Supply Voltage — Up to 40 V (per datasheet family)
Input-side Supply Voltage — [DATA_NEEDED: VCC input range]
UVLO — Yes (input and output side)
Miller Clamp — Available in family

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