2ED21844S06JXUMA1 vs 1ED3124MC12HXUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 2ED21844S06JXUMA1 disebabkan oleh Infineon dan 1ED3124MC12HXUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 2ED21844S06JXUMA1 1ED3124MC12HXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Driver Configuration Half-Bridge —
Number of Drivers 2 (high-side + low-side) 1
Input Type Non-Inverting —
Blocking Voltage (Voffset) 650 V —
Output Current (Source/Sink) 2.5 A typical —
Bootstrap Diode Integrated —
Supply Voltage (VCC) 10 V to 20 V [DATA_NEEDED: exact range] —
Propagation Delay (Typ.) 200 ns [DATA_NEEDED: matching value] —
Input Logic Compatibility TTL/CMOS 3.3 V and 5 V —
Undervoltage Lockout (UVLO) Yes, both HS and LS rails —
Shutdown Pin Yes —
Negative VS Transient Immunity -100 V typical —
Gambaran Suhu Operasi -40 C to +125 C —
Kemasan PG-DSO-14-49 (DSO-14) PG-DSO-8 (DSO-8)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL [DATA_NEEDED: MSL level] —
Status RoHS Compliant Compliant
Channel Type — Single-channel
Configuration — High-side / Low-side (non-inverting)
Bilangan Output — 1
Peak Source Current — 13.5 A
Peak Sink Current — 14 A
Isolation Technology — Magnetic coupling (coreless transformer)
Isolation Voltage (RMS) — 5.7 kV
Transient Overvoltage — 8000 Vpk
Supply Voltage (VCC2) — 10.5 V to 35 V
Supply Current (Max) — 1.1 mA
Propagation Delay (Typ) — 90 ns
Masa Pertambahan — 15 ns
Masa jatuh — 30 ns
Suhu Operasi — -40 C to +125 C
Protections — UVLO, Short-Circuit (DESAT)
Target Devices — IGBT, SiC MOSFET

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