2ED21844S06JXUMA1 vs 1ED3124MC12HXUMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng 2ED21844S06JXUMA1 sa pamamagitan ng Infineon at 1ED3124MC12HXUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
2ED21844S06JXUMA1 2ED21844S06JXUMA1 - 650V Half-Bridge Gate Driver 2.5A | Infineon

2ED21844S06JXUMA1 - 650V Half-Bridge Gate Driver 2.5A | Infineon

2ED21844S06JXUMA1 ✓ Nakahanda
Infineon
1ED3124MC12HXUMA1 1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon

1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon

1ED3124MC12HXUMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro 2ED21844S06JXUMA1 1ED3124MC12HXUMA1
Brand Infineon Infineon
Kategorya Power MOSFET Drivers Power MOSFET Drivers
Katayuan ng Lifecycle Aktibo Aktibo
Driver Configuration Half-Bridge —
Number of Drivers 2 (high-side + low-side) 1
Input Type Non-Inverting —
Blocking Voltage (Voffset) 650 V —
Output Current (Source/Sink) 2.5 A typical —
Bootstrap Diode Integrated —
Supply Voltage (VCC) 10 V to 20 V [DATA_NEEDED: exact range] —
Propagation Delay (Typ.) 200 ns [DATA_NEEDED: matching value] —
Input Logic Compatibility TTL/CMOS 3.3 V and 5 V —
Undervoltage Lockout (UVLO) Yes, both HS and LS rails —
Shutdown Pin Yes —
Negative VS Transient Immunity -100 V typical —
Hanay ng Temperature na Operasyon -40 C to +125 C —
Packhaging PG-DSO-14-49 (DSO-14) PG-DSO-8 (DSO-8)
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL [DATA_NEEDED: MSL level] —
Tindminan RoHS Compliant Compliant
Channel Type — Single-channel
Configuration — High-side / Low-side (non-inverting)
Bilang ng Outputs — 1
Peak Source Current — 13.5 A
Peak Sink Current — 14 A
Isolation Technology — Magnetic coupling (coreless transformer)
Isolation Voltage (RMS) — 5.7 kV
Transient Overvoltage — 8000 Vpk
Supply Voltage (VCC2) — 10.5 V to 35 V
Supply Current (Max) — 1.1 mA
Propagation Delay (Typ) — 90 ns
Oras ng Pagtaas — 15 ns
Time ng Pagbaba — 30 ns
Temperature na Operasyon — -40 C to +125 C
Protections — UVLO, Short-Circuit (DESAT)
Target Devices — IGBT, SiC MOSFET

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