2EDR8258XXUMA1 vs 2EDL8033G4CXTMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 2EDR8258XXUMA1 disebabkan oleh Infineon dan 2EDL8033G4CXTMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 2EDR8258XXUMA1 2EDL8033G4CXTMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Product Type Isolated single-channel gate driver Half-Bridge Gate Driver IC
Isolation Technology Magnetic (coreless transformer) coupling Junction-isolated
Number of Channels 1 —
Bilangan Output 2 (high-side and low-side, half-bridge) 2 (HS + LS)
Peak Source Current 5 A —
Peak Sink Current 9 A —
Galvanic Isolation (rms) 5700 Vrms —
Galvanic Isolation (peak) 8000 Vpk —
Common-Mode Transient Immunity (CMTI) 150 V/ns —
Propagation Delay (typical) 38 ns —
Driver Supply Voltage (VCC, VBS) 8 V to 20 V —
Input Supply Voltage (VDD) 3 V to 5.5 V —
Gambaran Suhu Operasi -40 °C to +125 °C -40C to +125C
Kemasan PG-DSO-14 (14-pin) PG-VDSON-10-2 (10-pin VDSON with exposed pad)
Protection Features UVLO (VCC/VBS), DESAT short-circuit, enable/shutdown, dead-time control, interleaving protection —
Logic Input Non-inverting, CMOS compatible —
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant Compliant
Configuration — High-Side / Low-Side, Non-Inverting
Source Drive Current — 3 A
Sink Drive Current — 4 A
Bootstrap Voltage (Max) — 120 V
VCC Supply Voltage — 10 V to 20 V
Logic Input Compatibility — 3.3 V / 5 V CMOS / TTL
Propagation Delay (Typ) — 45 ns
Channel-to-Channel Matching — <10 ns
Integrated Bootstrap Diode — Yes
Marking Code — 2ED8033G4C

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga