BSC010NE2LSIATMA1 vs BSC015NE2LS5IATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC010NE2LSIATMA1 disebabkan oleh Infineon dan BSC015NE2LS5IATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC010NE2LSIATMA1 BSC015NE2LS5IATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series / Family OptiMOS 25V —
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 25 V —
Continuous Drain Current (ID) at TA 38 A —
Continuous Drain Current (ID) at TC 100 A —
Power Dissipation (PD) at TA 2.5 W —
Power Dissipation (PD) at TC 96 W —
Kemasan PG-TDSON-8-7 (TDSON-8 EP) PG-TDSON-8-6 (SuperSO8 5x6)
Jenis Pemasangan Surface Mount Surface Mount
Configuration Single N-Channel —
Technology OptiMOS (Trench) OptiMOS 5 trench
Gambaran Suhu Operasi -55C to +150C (TJ) -55C to +150C (junction)
Kiraan Pin 8 8
Status RoHS Compliant Compliant
Gate Drive Logic-level compatible —
Aras MSL [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
Rds(on) at 10V [DATA_NEEDED: Rds(on) at VGS=10V] —
Rds(on) at 4.5V [DATA_NEEDED: Rds(on) at VGS=4.5V] —
Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Product Family — OptiMOS 5 25V
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) Max — 25 V
Continuous Drain Current (ID) at Ta — 33 A
Continuous Drain Current (ID) at Tc — 100 A
On-Resistance RDS(on) Max at VGS=10V — 1.5 mOhm
Power Dissipation at Ta — 2.5 W
Power Dissipation at Tc — 50 W
Gate Threshold Voltage VGS(th) Typ — [DATA_NEEDED: VGS(th) typical value]
Total Gate Charge Qg Typ — [DATA_NEEDED: Qg typical value]

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