BSC015NE2LS5IATMA1 vs BSZ018NE2LSIATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC015NE2LS5IATMA1 disebabkan oleh Infineon dan BSZ018NE2LSIATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC015NE2LS5IATMA1 BSZ018NE2LSIATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 25V —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) Max 25 V —
Continuous Drain Current (ID) at Ta 33 A —
Continuous Drain Current (ID) at Tc 100 A —
On-Resistance RDS(on) Max at VGS=10V 1.5 mOhm —
Power Dissipation at Ta 2.5 W —
Power Dissipation at Tc 50 W —
Kemasan PG-TDSON-8-6 (SuperSO8 5x6) PG-TSDSON-8-FL (8-pin TSDSON with exposed pad)
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 8 —
Technology OptiMOS 5 trench OptiMOS (Infineon trench MOSFET)
Gambaran Suhu Operasi -55C to +150C (junction) -55 C to +150 C
Gate Threshold Voltage VGS(th) Typ [DATA_NEEDED: VGS(th) typical value] —
Total Gate Charge Qg Typ [DATA_NEEDED: Qg typical value] —
Status RoHS Compliant Compliant
Aras MSL 1 (per JEDEC J-STD-020) —
Part Number — BSZ018NE2LSIATMA1
Channel Type — N-Channel
Drain-Source Voltage (VDS) — 25 V
Continuous Drain Current (ID) at Ta=25C — 22 A
Continuous Drain Current (ID) at Tc=25C — 40 A
Pulsed Drain Current (IDM) — 160 A
Typical On-Resistance RDS(on) at VGS=10V — 1.8 mOhm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Power Dissipation at Ta=25C — 2.1 W
Power Dissipation at Tc=25C — 69 W
Lead-Free — Yes

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga