BSC016N06NSTATMA1 vs IPP60R180P7XKSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC016N06NSTATMA1 disebabkan oleh Infineon dan IPP60R180P7XKSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC016N06NSTATMA1 IPP60R180P7XKSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC016N06NSTATMA1 —
FET Type N-Channel —
Technology OptiMOS 5 CoolMOS P7 (Superjunction N-Channel)
Drain-to-Source Voltage (VDS) 60 V —
Gate-to-Source Voltage (VGS) ±20 V —
Continuous Drain Current (ID, Tc=25C) 100 A —
Continuous Drain Current (ID, Ta=25C) 31 A —
On-Resistance RDS(on) max (VGS=10V) 1.6 mOhm —
Power Dissipation (Tc) 167 W —
Power Dissipation (Ta) 3 W —
Kemasan PG-TDSON-8 FL (SuperSO8 5x6 mm) PG-TO220-3 (through-hole)
Jenis Pemasangan Surface Mount Through Hole
Gambaran Suhu Operasi -55 C to +150 C -55 °C to +150 °C
Aras MSL [DATA_NEEDED: MSL level] N/A (through-hole)
Status RoHS Compliant Compliant
Lead-Free Yes Yes
Series OptiMOS —
Drain-Source Voltage (VDS) — 600 V
Continuous Drain Current (ID) at TC=25°C — 18 A
Pulsed Drain Current (ID,pulse) — [DATA_NEEDED: pulsed drain current at TC=25°C]
On-Resistance RDS(on) max at VGS=10V — 180 mΩ
Gate Threshold Voltage VGS(th) typ — 3.5 V
Gate Charge Qg typ — [DATA_NEEDED: total gate charge at VGS=10V]
Power Dissipation PD at TC=25°C — 72 W
Bilangan Pin — 3 (Gate, Drain, Source)
Avalanche Energy Rated — Yes

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