BSC016N06NSTATMA1 vs IPP60R180P7XKSA1 Comparison

Detailed side-by-side comparison of BSC016N06NSTATMA1 by Infineon and IPP60R180P7XKSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSC016N06NSTATMA1 IPP60R180P7XKSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC016N06NSTATMA1 —
FET Type N-Channel —
Technology OptiMOS 5 CoolMOS P7 (Superjunction N-Channel)
Drain-to-Source Voltage (VDS) 60 V —
Gate-to-Source Voltage (VGS) ±20 V —
Continuous Drain Current (ID, Tc=25C) 100 A —
Continuous Drain Current (ID, Ta=25C) 31 A —
On-Resistance RDS(on) max (VGS=10V) 1.6 mOhm —
Power Dissipation (Tc) 167 W —
Power Dissipation (Ta) 3 W —
Package PG-TDSON-8 FL (SuperSO8 5x6 mm) PG-TO220-3 (through-hole)
Mounting Type Surface Mount Through Hole
Operating Temperature Range -55 C to +150 C -55 °C to +150 °C
MSL Level [DATA_NEEDED: MSL level] N/A (through-hole)
RoHS Status Compliant Compliant
Lead-Free Yes Yes
Series OptiMOS —
Drain-Source Voltage (VDS) — 600 V
Continuous Drain Current (ID) at TC=25°C — 18 A
Pulsed Drain Current (ID,pulse) — [DATA_NEEDED: pulsed drain current at TC=25°C]
On-Resistance RDS(on) max at VGS=10V — 180 mΩ
Gate Threshold Voltage VGS(th) typ — 3.5 V
Gate Charge Qg typ — [DATA_NEEDED: total gate charge at VGS=10V]
Power Dissipation PD at TC=25°C — 72 W
Number of Pins — 3 (Gate, Drain, Source)
Avalanche Energy Rated — Yes

Datasheets & Resources

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