BSC019N04LSTATMA1 vs IAUC100N04S6N022ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC019N04LSTATMA1 disebabkan oleh Infineon dan IAUC100N04S6N022ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUC100N04S6N022ATMA1 IAUC100N04S6N022ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon

IAUC100N04S6N022ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon

IAUC100N04S6N022ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSC019N04LSTATMA1 IAUC100N04S6N022ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS 5 (N-channel trench MOSFET) OptiMOS 6, N-Channel MOSFET
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID, Tc=25C) 161 A —
Continuous Drain Current (ID, Ta=25C) 28 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed ID limit] —
On-Resistance RDS(on) max @ VGS=10V 1.9 mOhm —
On-Resistance RDS(on) max @ VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Gate Threshold Voltage VGS(th) typ 1.7 V —
Total Gate Charge Qg typ 85 nC —
Power Dissipation PD (Tc=25C) 94 W —
Gambaran Suhu Operasi -55 C to +150 C -55C to +175C (junction)
Kemasan TDSON-8 (SuperSO8) 5x6 mm PG-TDSON-8 (5x6 mm) leadless
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 (unlimited) 1 (per JEDEC J-STD-020)
Status RoHS Compliant Compliant
Lead-Free / Halogen-Free Yes / Yes —
Avalanche Rated Yes —
Drain-Source Voltage (V_DSS) — 40 V
Continuous Drain Current (I_D, Tc) — 100 A
Power Dissipation (P_D, Tc) — 75 W
R_DS(on) (typ at V_GS=10V) — 2.2 mOhm
Polarity — N-Channel enhancement mode
Automotive Qualification — AEC-Q100 (IAUC family)
Kiraan Pin — 8
Gate Threshold V_GS(th) — [DATA_NEEDED: gate threshold voltage]
Total Gate Charge Q_g — [DATA_NEEDED: total gate charge]
Lead-Free — Yes

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