BSC019N04LSTATMA1 vs IAUC100N04S6N022ATMA1 比較

詳細並排比較 BSC019N04LSTATMA1 由 Infineon 與 IAUC100N04S6N022ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSC019N04LSTATMA1 BSC019N04LSTATMA1 - 40V N-Ch OptiMOS 5 Power MOSFET | Infineon

BSC019N04LSTATMA1 - 40V N-Ch OptiMOS 5 Power MOSFET | Infineon

BSC019N04LSTATMA1 ✓ 啟用中
Infineon
IAUC100N04S6N022ATMA1 IAUC100N04S6N022ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon

IAUC100N04S6N022ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon

IAUC100N04S6N022ATMA1 ✓ 啟用中

規格比較

參數 BSC019N04LSTATMA1 IAUC100N04S6N022ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Technology OptiMOS 5 (N-channel trench MOSFET) OptiMOS 6, N-Channel MOSFET
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID, Tc=25C) 161 A —
Continuous Drain Current (ID, Ta=25C) 28 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed ID limit] —
On-Resistance RDS(on) max @ VGS=10V 1.9 mOhm —
On-Resistance RDS(on) max @ VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Gate Threshold Voltage VGS(th) typ 1.7 V —
Total Gate Charge Qg typ 85 nC —
Power Dissipation PD (Tc=25C) 94 W —
工作溫度範圍 -55 C to +150 C -55C to +175C (junction)
封裝 TDSON-8 (SuperSO8) 5x6 mm PG-TDSON-8 (5x6 mm) leadless
安裝類型 Surface Mount Surface Mount
MSL 等級 1 (unlimited) 1 (per JEDEC J-STD-020)
RoHS 狀態 Compliant Compliant
Lead-Free / Halogen-Free Yes / Yes —
Avalanche Rated Yes —
Drain-Source Voltage (V_DSS) — 40 V
Continuous Drain Current (I_D, Tc) — 100 A
Power Dissipation (P_D, Tc) — 75 W
R_DS(on) (typ at V_GS=10V) — 2.2 mOhm
Polarity — N-Channel enhancement mode
Automotive Qualification — AEC-Q100 (IAUC family)
腳位數 — 8
Gate Threshold V_GS(th) — [DATA_NEEDED: gate threshold voltage]
Total Gate Charge Q_g — [DATA_NEEDED: total gate charge]
Lead-Free — Yes

資料表與資源

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