BSC020N03LSGATMA1 vs BSZ018NE2LSATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC020N03LSGATMA1 disebabkan oleh Infineon dan BSZ018NE2LSATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC020N03LSGATMA1 BSZ018NE2LSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 3 —
FET Type N-Channel —
Drain-Source Voltage (VDS) 30 V 25 V
Continuous Drain Current (ID) at Ta=25C 28 A —
Continuous Drain Current (ID) at Tc=25C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] —
Gate-Source Voltage (VGS) +/-20 V —
Gate Threshold Voltage (VGS(th)) 1 V to 2.2 V (typical range, per datasheet) —
On-State Resistance (RDS(on)) at VGS=10V approximately 2.0 mOhm —
Power Dissipation (PD) at Ta=25C 2.5 W —
Power Dissipation (PD) at Tc=25C 96 W —
Gambaran Suhu Operasi -55 C to +150 C (junction) -55C to +150C
Kemasan / Case PG-TDSON-8-1 (TDSON EP, 5 mm x 6 mm) —
Jenis Pemasangan Surface Mount Surface Mount
Packaging Tape & Reel —
Status RoHS Compliant Compliant
Aras MSL 1 (per JEDEC J-STD-020, per Infineon datasheet) [DATA_NEEDED: MSL rating]
Product Family — OptiMOS 25V
Technology — N-Channel Trench MOSFET
Continuous Drain Current (TA) — 23 A
Continuous Drain Current (TC) — 40 A
Power Dissipation (TA) — 2.1 W
Power Dissipation (TC) — 69 W
On-Resistance RDS(on) — [DATA_NEEDED: RDS(on) typical at VGS=10V]
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: typical VGS(th)]
Gate Charge Qg — [DATA_NEEDED: total gate charge at VGS=10V]
Kemasan — PG-TSDSON-8-FL (8-pin TSDSON with exposed pad)
Lead-Free — Yes
Boson Bebas — Yes

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