BSC030N08NS5ATMA1 vs BSC027N04LSGATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC030N08NS5ATMA1 disebabkan oleh Infineon dan BSC027N04LSGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC030N08NS5ATMA1 BSC027N04LSGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Type N-Channel Power MOSFET —
Technology OptiMOS 5 OptiMOS 3 (Trench)
Drain-Source Voltage (VDS) max 80 V —
Continuous Drain Current (ID) at TC=25C 100 A —
Pulsed Drain Current (ID,pulse) 161 A —
Gate-Source Voltage (VGS) max +/-20 V ±20 V
RDS(on) max at VGS=10 V 3.0 mOhm —
RDS(on) max at VGS=7 V [DATA_NEEDED: RDS(on) at VGS=7V] —
Power Dissipation (Ta=25C, 1.5mm FR4) 2.5 W —
Power Dissipation (TC=25C) 139 W —
Operating Temperature Range (TJ) -55C to +150C —
Kemasan PG-TDSON-8-7 (SuperSO8 5x6 mm) PG-TDSON-8-1 (SuperSO8 5x6)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 (per JEDEC J-STD-020) 1
Status RoHS Compliant Compliant
Boson Bebas Yes Yes
Lead-Free Yes —
Gate Drive Logic Standard 10V, compatible with 12V drive —
Optimized Application Synchronous Rectification —
Product Family — OptiMOS 3
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at Ta=25°C — 24 A
Continuous Drain Current (ID) at Tc=25°C — 100 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=10V — 2.7 mΩ
Power Dissipation (Ta=25°C) — 2.5 W
Pembuangan Kuasa (TC=25°C) — 83 W
Gambaran Suhu Operasi — -55°C to +150°C

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