BSC030N08NS5ATMA1 vs IPG20N10S436AATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC030N08NS5ATMA1 disebabkan oleh Infineon dan IPG20N10S436AATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC030N08NS5ATMA1 IPG20N10S436AATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Type N-Channel Power MOSFET —
Technology OptiMOS 5 —
Drain-Source Voltage (VDS) max 80 V —
Continuous Drain Current (ID) at TC=25C 100 A —
Pulsed Drain Current (ID,pulse) 161 A —
Gate-Source Voltage (VGS) max +/-20 V —
RDS(on) max at VGS=10 V 3.0 mOhm —
RDS(on) max at VGS=7 V [DATA_NEEDED: RDS(on) at VGS=7V] —
Power Dissipation (Ta=25C, 1.5mm FR4) 2.5 W —
Power Dissipation (TC=25C) 139 W —
Operating Temperature Range (TJ) -55C to +150C —
Kemasan PG-TDSON-8-7 (SuperSO8 5x6 mm) PG-TDSON-8-10 (Wettable Flank)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 (per JEDEC J-STD-020) MSL1 (260 C peak reflow)
Status RoHS Compliant Compliant (Green Product)
Boson Bebas Yes —
Lead-Free Yes —
Gate Drive Logic Standard 10V, compatible with 12V drive —
Optimized Application Synchronous Rectification —
Configuration — Dual N-Channel (2 Elements with Built-in Diode)
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) — 20 A (per channel)
Total Power Dissipation (PD) — 43 W
Operating Mode — Enhancement Mode
Operating Temperature (TJ max) — +175 C
JESD-609 Code — e3
Automotive Qualification — AEC-Q101
Avalanche Tested — 100%
AOI Compatible — Yes (Wettable Flank)
Channel Type — N-Channel Normal Level

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