BSC036NE7NS3GATMA1 vs ISC009N06LM5ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC036NE7NS3GATMA1 disebabkan oleh Infineon dan ISC009N06LM5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
BSC036NE7NS3GATMA1 - 75V 100A N-Channel OptiMOS 3 MOSFET | Infineon
BSC036NE7NS3GATMA1 ✓ Aktif
Pengandingan Spesifikasi
| Parametr | BSC036NE7NS3GATMA1 | ISC009N06LM5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3 | OptiMOS 5 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 75 V | 60 V |
| Continuous Drain Current (ID, Tc=25C) | 100 A | — |
| Pulsed Drain Current (IDM) | 400 A | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (RDS(on) max @ VGS=10V) | 3.6 mOhm | — |
| Gate Threshold Voltage (VGS(th) typ) | 2.6 V | — |
| Total Gate Charge (Qg typ @ VGS=10V) | 45 nC | — |
| Rise Time (tr typ) | 13 ns | — |
| Fall Time (tf typ) | 11 ns | — |
| Power Dissipation (PD max, Tc=25C) | 156 W | — |
| Power Dissipation (Ta=25C) | 2.5 W | — |
| Thermal Resistance, Junction-to-Case (RthJC) | 0.8 C/W | — |
| Gambaran Suhu Operasi | -55C to +175C | -55 C to +175 C |
| Kemasan | PG-TDSON-8-7 (5x6 mm) | PG-TSON-8-3 (SuperSO8 5x6) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | ROHS3 Compliant | Compliant |
| Aras MSL | 1 | [DATA_NEEDED: MSL rating] |
| Technology | — | OptiMOS 5 60V N-channel trench MOSFET |
| Jenis Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Ta | — | 41 A |
| Continuous Drain Current (ID) at Tc | — | 348 A |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS maximum rating] |
| Gate-Source Threshold (VGS(th)) | — | [DATA_NEEDED: VGS threshold typical] |
| On-Resistance RDS(on) max at VGS=10V | — | 0.9 mOhm |
| Power Dissipation at Ta (PD) | — | 3 W |
| Power Dissipation at Tc (PD) | — | 214 W |