BSC036NE7NS3GATMA1 vs ISC009N06LM5ATMA1 比較
詳細並排比較 BSC036NE7NS3GATMA1 由 Infineon 與 ISC009N06LM5ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
BSC036NE7NS3GATMA1 - 75V 100A N-Channel OptiMOS 3 MOSFET | Infineon
BSC036NE7NS3GATMA1 ✓ 啟用中
規格比較
| 參數 | BSC036NE7NS3GATMA1 | ISC009N06LM5ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3 | OptiMOS 5 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 75 V | 60 V |
| Continuous Drain Current (ID, Tc=25C) | 100 A | — |
| Pulsed Drain Current (IDM) | 400 A | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (RDS(on) max @ VGS=10V) | 3.6 mOhm | — |
| Gate Threshold Voltage (VGS(th) typ) | 2.6 V | — |
| Total Gate Charge (Qg typ @ VGS=10V) | 45 nC | — |
| Rise Time (tr typ) | 13 ns | — |
| Fall Time (tf typ) | 11 ns | — |
| Power Dissipation (PD max, Tc=25C) | 156 W | — |
| Power Dissipation (Ta=25C) | 2.5 W | — |
| Thermal Resistance, Junction-to-Case (RthJC) | 0.8 C/W | — |
| 工作溫度範圍 | -55C to +175C | -55 C to +175 C |
| 封裝 | PG-TDSON-8-7 (5x6 mm) | PG-TSON-8-3 (SuperSO8 5x6) |
| 安裝類型 | Surface Mount | Surface Mount |
| RoHS 狀態 | ROHS3 Compliant | Compliant |
| MSL 等級 | 1 | [DATA_NEEDED: MSL rating] |
| Technology | — | OptiMOS 5 60V N-channel trench MOSFET |
| 電晶體類型 | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Ta | — | 41 A |
| Continuous Drain Current (ID) at Tc | — | 348 A |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS maximum rating] |
| Gate-Source Threshold (VGS(th)) | — | [DATA_NEEDED: VGS threshold typical] |
| On-Resistance RDS(on) max at VGS=10V | — | 0.9 mOhm |
| Power Dissipation at Ta (PD) | — | 3 W |
| Power Dissipation at Tc (PD) | — | 214 W |