BSC0501NSIATMA1 vs BSC155N06NDATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC0501NSIATMA1 disebabkan oleh Infineon dan BSC155N06NDATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC0501NSIATMA1 BSC155N06NDATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Infineon Technologies
Product Family OptiMOS 5 25V/30V —
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at Ta 29 A —
Continuous Drain Current (ID) at Tc 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] [DATA_NEEDED: pulsed drain current]
Power Dissipation at Ta (PD) 2.5 W —
Power Dissipation at Tc (PD) 50 W —
Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] [DATA_NEEDED: gate threshold voltage]
On-Resistance (RDS(on)) [DATA_NEEDED: RDS(on) max at 10V VGS] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
Suhu Hubungan Operasi -55C to +150C —
Kemasan PG-TDSON-8-6 (SuperSO8) PG-TDSON-8-4 (SuperSO8 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 (per JEDEC J-STD-020) 1
Status RoHS Compliant Compliant (Pb-free plating)
Avalanche Rated Yes —
Technology Trench-gate OptiMOS 5 OptiMOS 3 (N-channel trench)
Part Number — BSC155N06NDATMA1
Configuration — Dual N-channel MOSFET array
Drain-to-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at Tc=25C — 20 A
On-State Resistance RDS(on) max at VGS=10V — 15.5 mOhm
Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Gambaran Suhu Operasi — -55 C to +175 C
Power Dissipation (Tc=25C) — 50 W
Lead-Free Plating — Yes
Shoot-Through Immunity Qgd/Qgs — < 0.8

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