BSC0504NSIATMA1 vs BSC027N04LSGATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC0504NSIATMA1 disebabkan oleh Infineon dan BSC027N04LSGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC0504NSIATMA1 BSC027N04LSGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor N-channel MOSFET N-Channel MOSFET
Drain-to-Source Voltage 30 V —
Continuous Drain Current at Ta 21 A —
Continuous Drain Current at Tc 72 A —
Power Dissipation at Ta 2.5 W —
Power Dissipation at Tc 30 W —
Technology Family OptiMOS 5 —
Kemasan PG-TDSON-8-6 PG-TDSON-8-1 (SuperSO8 5x6)
Jenis Pemasangan Surface Mount Surface Mount
Bilangan Pin 8 pins —
Exposed Pad Yes, according to distributor package description —
On-State Resistance [DATA_NEEDED: on-state resistance] —
Gate Charge [DATA_NEEDED: gate charge] —
Tegangan Had Kepasaran [DATA_NEEDED: gate threshold voltage] —
Tegangan Panas [DATA_NEEDED: thermal resistance] —
Gambaran Suhu Operasi [DATA_NEEDED: operating temperature range] -55°C to +150°C
AEC-Q100 Qualification [DATA_NEEDED: AEC-Q100 qualification] —
Status RoHS unknown Compliant
Lead-Free Status unknown —
Halogen-Free Status unknown —
REACH Status unknown —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 3
Drain-Source Voltage (VDS) — 40 V
Gate-Source Voltage (VGS) max — ±20 V
Continuous Drain Current (ID) at Ta=25°C — 24 A
Continuous Drain Current (ID) at Tc=25°C — 100 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=10V — 2.7 mΩ
Power Dissipation (Ta=25°C) — 2.5 W
Pembuangan Kuasa (TC=25°C) — 83 W
Technology — OptiMOS 3 (Trench)
Aras MSL — 1
Boson Bebas — Yes

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