BSC054N04NSGATMA1 vs IRF8736TRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC054N04NSGATMA1 disebabkan oleh Infineon dan IRF8736TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSC054N04NSGATMA1 | IRF8736TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSC054N04NSGATMA1 | — |
| Technology | OptiMOS 3 (N-Channel Trench MOSFET) | StrongIRFET / HEXFET |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at Tc=25C | 81 A | — |
| Continuous Drain Current (ID) at Ta=25C | 17 A | — |
| On-Resistance RDS(on) max at VGS=10V | 5.4 mOhm | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Power Dissipation at Tc=25C | 57 W | — |
| Power Dissipation at Ta=25C | 2.5 W | — |
| Gambaran Suhu Operasi | -55C to +150C | -55C to +150C (junction) |
| Kemasan | PG-TDSON-8-5 (SuperSO8 5x6 mm) | SO-8 (8-SO, MS-012AA) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Status RoHS | Compliant | — |
| Gate Drive Voltage (recommended) | 10 V | — |
| Lead-Free Reflow | Yes | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) at TA=25C | — | 18 A |
| Power Dissipation (PD) Max at TA=25C | — | 2.5 W |
| Drain-Source On-Resistance (RDS(on)) Max | — | 4.8 mOhm at VGS = 10V |
| Gate Charge (Qg) Typical | — | 17 nC |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Lead-Free / RoHS | — | Yes (PBF suffix = lead-free, RoHS compliant) |
| Avalanche Rated | — | Yes (fully characterized avalanche voltage) |
| Configuration | — | Single |
| Packaging | — | Tape & Reel (TRPBF suffix) |