BSC060P03NS3EGATMA1 vs IRFR5410TRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC060P03NS3EGATMA1 disebabkan oleh Infineon dan IRFR5410TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
BSC060P03NS3EGATMA1 - 30V P-Ch MOSFET 6mΩ 100A OptiMOS | Infineon
BSC060P03NS3EGATMA1 ✓ Aktif
Pengandingan Spesifikasi
| Parametr | BSC060P03NS3EGATMA1 | IRFR5410TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -30 V | -100 V |
| Continuous Drain Current (Ta) | 17.7 A | — |
| Continuous Drain Current (Tc) | 100 A | — |
| On-State Resistance RDS(on) max @ VGS=10V | 6 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | -2.5 V | — |
| Total Gate Charge Qg @ VGS=10V | 81 nC | — |
| Input Capacitance Ciss | 6.02 nF | — |
| Output Capacitance Coss | 2.81 nF | — |
| Reverse Transfer Capacitance Crss | 220 pF | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 83 W | — |
| Gambaran Suhu Operasi | -55°C to +150°C | -55 °C to +150 °C (TJ) |
| Kemasan | PG-TDSON-8-1 (SuperSO8 5x6) | TO-252AA (DPAK), surface mount |
| Technology | OptiMOS™ P-channel Trench | HEXFET (advanced process, Gen 5) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | Compliant | — |
| Continuous Drain Current (ID) at TC = 25 °C | — | -13 A |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS = -10 V | — | 205 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Total Gate Charge (Qg) typ | — | 70 nC |
| Power Dissition (PD) at TC = 25 °C | — | 66 W |
| Avalanche Rated | — | Yes (fully avalanche rated) |
| Lead-Free / RoHS Status | — | Lead-free, RoHS compliant (PBF suffix) |
| Aras MSL | — | [DATA_NEEDED: MSL rating] |
| RDS(on) Test Conditions | — | VGS = -10 V, ID = -7.0 A |