BSC060P03NS3EGATMA1 vs IRFR5410TRPBF 比較
詳細並排比較 BSC060P03NS3EGATMA1 由 Infineon 與 IRFR5410TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
BSC060P03NS3EGATMA1 - 30V P-Ch MOSFET 6mΩ 100A OptiMOS | Infineon
BSC060P03NS3EGATMA1 ✓ 啟用中
規格比較
| 參數 | BSC060P03NS3EGATMA1 | IRFR5410TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Polarity | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -30 V | -100 V |
| Continuous Drain Current (Ta) | 17.7 A | — |
| Continuous Drain Current (Tc) | 100 A | — |
| On-State Resistance RDS(on) max @ VGS=10V | 6 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | -2.5 V | — |
| Total Gate Charge Qg @ VGS=10V | 81 nC | — |
| Input Capacitance Ciss | 6.02 nF | — |
| Output Capacitance Coss | 2.81 nF | — |
| Reverse Transfer Capacitance Crss | 220 pF | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 83 W | — |
| 工作溫度範圍 | -55°C to +150°C | -55 °C to +150 °C (TJ) |
| 封裝 | PG-TDSON-8-1 (SuperSO8 5x6) | TO-252AA (DPAK), surface mount |
| Technology | OptiMOS™ P-channel Trench | HEXFET (advanced process, Gen 5) |
| 安裝類型 | Surface Mount | Surface Mount |
| RoHS 狀態 | Compliant | — |
| Continuous Drain Current (ID) at TC = 25 °C | — | -13 A |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS = -10 V | — | 205 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Total Gate Charge (Qg) typ | — | 70 nC |
| Power Dissition (PD) at TC = 25 °C | — | 66 W |
| Avalanche Rated | — | Yes (fully avalanche rated) |
| Lead-Free / RoHS Status | — | Lead-free, RoHS compliant (PBF suffix) |
| MSL 等級 | — | [DATA_NEEDED: MSL rating] |
| RDS(on) Test Conditions | — | VGS = -10 V, ID = -7.0 A |