BSC060P03NS3EGATMA1 vs IRFR5410TRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC060P03NS3EGATMA1 sa pamamagitan ng Infineon at IRFR5410TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSC060P03NS3EGATMA1 BSC060P03NS3EGATMA1 - 30V P-Ch MOSFET 6mΩ 100A OptiMOS | Infineon

BSC060P03NS3EGATMA1 - 30V P-Ch MOSFET 6mΩ 100A OptiMOS | Infineon

BSC060P03NS3EGATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSC060P03NS3EGATMA1 IRFR5410TRPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Polarity P-Channel P-Channel
Drain-Source Voltage (VDS) -30 V -100 V
Continuous Drain Current (Ta) 17.7 A —
Continuous Drain Current (Tc) 100 A —
On-State Resistance RDS(on) max @ VGS=10V 6 mΩ —
Gate Threshold Voltage VGS(th) typ -2.5 V —
Total Gate Charge Qg @ VGS=10V 81 nC —
Input Capacitance Ciss 6.02 nF —
Output Capacitance Coss 2.81 nF —
Reverse Transfer Capacitance Crss 220 pF —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 83 W —
Hanay ng Temperature na Operasyon -55°C to +150°C -55 °C to +150 °C (TJ)
Packhaging PG-TDSON-8-1 (SuperSO8 5x6) TO-252AA (DPAK), surface mount
Technology OptiMOS™ P-channel Trench HEXFET (advanced process, Gen 5)
Uri ng Pagpapasok Surface Mount Surface Mount
Tindminan RoHS Compliant —
Continuous Drain Current (ID) at TC = 25 °C — -13 A
Static Drain-Source On-Resistance (RDS(on)) max at VGS = -10 V — 205 mΩ
Gate-Source Voltage (VGS) max — ±20 V
Total Gate Charge (Qg) typ — 70 nC
Power Dissition (PD) at TC = 25 °C — 66 W
Avalanche Rated — Yes (fully avalanche rated)
Lead-Free / RoHS Status — Lead-free, RoHS compliant (PBF suffix)
Level ng MSL — [DATA_NEEDED: MSL rating]
RDS(on) Test Conditions — VGS = -10 V, ID = -7.0 A

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