BSC070N10NS5ATMA1 vs BSC190N15NS3GATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC070N10NS5ATMA1 disebabkan oleh Infineon dan BSC190N15NS3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
BSC190N15NS3GATMA1 - 150V 50A N-Channel OptiMOS 3 MOSFET | Infineon
BSC190N15NS3GATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | BSC070N10NS5ATMA1 | BSC190N15NS3GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Technology | OptiMOS 5 (N-channel trench) | OptiMOS 3 (N-Channel) |
| Drain-Source Voltage (VDS) max | 100 V | — |
| Continuous Drain Current (ID) at TC=25C | 80 A | — |
| RDS(on) max @ VGS=10V | 7 mOhm | — |
| Gate-Source Voltage (VGS) max | 20 V | 20 V |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | 2.5 V to 3.5 V |
| Total Gate Charge (Qg) | [DATA_NEEDED: typical Qg] | [DATA_NEEDED: total gate charge] |
| Power Dissition at TC=25C (Ptot) | 83 W | — |
| Power Dissipation at TA=25C | 2.5 W | — |
| Gambaran Suhu Hubungan Operasi | -55 C to +150 C | — |
| Kemasan | PG-TDSON-8-7 (SuperSO8 5x6 mm) | PG-TDSON-8-1 (TDSON-8 EP) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | 1 (per JEDEC J-STD-020) | 1 |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Typical Application | Synchronous rectification in SMPS | — |
| Drain-Source Voltage (VDS) | — | 150 V |
| Continuous Drain Current (ID) at Tc=25C | — | 50 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | — | 19 mOhm |
| On-Resistance RDS(on) typ at VGS=10V | — | [DATA_NEEDED: RDS(on) typical at 10V] |
| Power Dissipation (PD) at Tc=25C | — | 125 W |
| Gambaran Suhu Operasi | — | -55 C to +150 C |