BSC076N04NDATMA1 vs BSC019N08NS5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC076N04NDATMA1 disebabkan oleh Infineon dan BSC019N08NS5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC076N04NDATMA1 BSC019N08NS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 3 —
Configuration Dual N-Channel (independent MOSFETs) —
Drain-Source Voltage (VDS) max 40 V 80 V
Continuous Drain Current (ID) 20 A (Tc) —
Gate Threshold Voltage (VGS(th)) 4 V (max, typical) —
On-Resistance RDS(on) max 7.6 mOhm —
Power Dissipation (Ta) 2.3 W —
Power Dissipation (Tc) 65 W —
Technology Trench MOSFET (OptiMOS 3) OptiMOS 5 (N-channel trench)
Qgd/Qgs Ratio < 0.8 (high shot-through immunity) —
Suhu Hubungan Operasi -55 C to +175 C —
Kemasan / Case PG-TDSON-8-4 (SuperSO8, 5x6 mm) —
Jenis Pemasangan Surface Mount Surface Mount
RoHS / Pb-Free Compliant (Pb-free plating) —
FET Type 2x N-Channel MOSFET array —
Polarity — N-Channel
Gate-Source Voltage (VGS) max — ±20 V
Continuous Drain Current (ID) at TA=25C — 28 A
Continuous Drain Current (ID) at TC=25C — 237 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current value]
On-Resistance RDS(on) max at VGS=10V — 1.9 mOhm
Gate Threshold Voltage VGS(th) typ — 3.0 V
Total Gate Charge Qg — [DATA_NEEDED: total gate charge Qg]
Power Dissipation (TA=25C) — 3 W
Power Dissipation (TC=25C) — 214 W
Gambaran Suhu Operasi — -55 C to +150 C
Kemasan — PG-TSON-8-3 (SuperSO8 5x6 mm)
Aras MSL — 1
Status RoHS — Compliant
Avalanche Rated — Yes

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