BSC0921NDIATMA1 vs BSC019N04LSTATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC0921NDIATMA1 disebabkan oleh Infineon dan BSC019N04LSTATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC0921NDIATMA1 BSC019N04LSTATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Technology OptiMOS 25V (N-channel) OptiMOS 5 (N-channel trench MOSFET)
Configuration Dual N-Channel MOSFET Array —
Drain-Source Voltage (VDS) 30 V 40 V
Continuous Drain Current (ID) 17 A (per channel) —
Pulsed Drain Current (IDM) 31 A (per channel, package-limited) [DATA_NEEDED: pulsed ID limit]
Total Power Dissipation (PD) 1 W —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=10V/4.5V] —
Gate Charge (Qg) Ultra-low (OptiMOS 25V family characteristic) —
Output Charge (Qoss) Ultra-low (OptiMOS 25V family characteristic) —
Kemasan PG-TISON-8 (8-pin, exposed pad) TDSON-8 (SuperSO8) 5x6 mm
Jenis Pemasangan Surface Mount Surface Mount
Suhu Operasi -55C to +150C (junction) —
Status RoHS Compliant Compliant
Aras MSL 1 (per Infineon OptiMOS family) 1 (unlimited)
Primary Application Synchronous buck converters, VRMs, POL regulators —
Continuous Drain Current (ID, Tc=25C) — 161 A
Continuous Drain Current (ID, Ta=25C) — 28 A
On-Resistance RDS(on) max @ VGS=10V — 1.9 mOhm
On-Resistance RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Gate Threshold Voltage VGS(th) typ — 1.7 V
Total Gate Charge Qg typ — 85 nC
Power Dissipation PD (Tc=25C) — 94 W
Gambaran Suhu Operasi — -55 C to +150 C
Lead-Free / Halogen-Free — Yes / Yes
Avalanche Rated — Yes

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