BSC093N15NS5ATMA1 vs BSC052N08NS5ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC093N15NS5ATMA1 disebabkan oleh Infineon dan BSC052N08NS5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSC093N15NS5ATMA1 | BSC052N08NS5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOS 5 150V | OptiMOS 5 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 150 V | — |
| Continuous Drain Current (ID) at TC | 87 A | — |
| Drain-Source On-Resistance (RDS(on)) Max at VGS=10V | 9.3 mΩ | — |
| Power Dissipation (PD) at TC | 139 W | — |
| Kemasan | SuperSO8 5x6 (PG-TDSON-8-7) | PG-TDSON-8 (SuperSO8) 5x6 mm |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gate Drive Voltage (VGS) Recommended | 10 V | — |
| Gambaran Suhu Operasi | [DATA_NEEDED: operating temperature range] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge Qg] | — |
| Status RoHS | Compliant | Compliant |
| Aras MSL | [DATA_NEEDED: MSL level] | 1 (unlimited) |
| Boson Bebas | [DATA_NEEDED: halogen free status] | — |
| Part Number | — | BSC052N08NS5ATMA1 |
| Jenis Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID, Tc) | — | 95 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | — | 5.2 mΩ |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage VGS(th) typ | — | 2.5-3.0 V |
| Total Power Dissipation (Tc) | — | 83 W |
| Total Power Dissipation (Ta) | — | 2.5 W |
| Suhu Hubungan Operasi | — | -55C to +150C |