BSC093N15NS5ATMA1 vs BSC052N08NS5ATMA1 Comparison

Detailed side-by-side comparison of BSC093N15NS5ATMA1 by Infineon and BSC052N08NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSC093N15NS5ATMA1 BSC052N08NS5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Technology OptiMOS 5 150V OptiMOS 5
FET Type N-Channel —
Drain-Source Voltage (VDS) Max 150 V —
Continuous Drain Current (ID) at TC 87 A —
Drain-Source On-Resistance (RDS(on)) Max at VGS=10V 9.3 mΩ —
Power Dissipation (PD) at TC 139 W —
Package SuperSO8 5x6 (PG-TDSON-8-7) PG-TDSON-8 (SuperSO8) 5x6 mm
Mounting Type Surface Mount Surface Mount
Gate Drive Voltage (VGS) Recommended 10 V —
Operating Temperature Range [DATA_NEEDED: operating temperature range] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge Qg] —
RoHS Status Compliant Compliant
MSL Level [DATA_NEEDED: MSL level] 1 (unlimited)
Halogen Free [DATA_NEEDED: halogen free status] —
Part Number — BSC052N08NS5ATMA1
Transistor Type — N-Channel MOSFET
Drain-Source Voltage (VDS) — 80 V
Continuous Drain Current (ID, Tc) — 95 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=10V — 5.2 mΩ
Gate-Source Voltage (VGS) — ±20 V
Gate Threshold Voltage VGS(th) typ — 2.5-3.0 V
Total Power Dissipation (Tc) — 83 W
Total Power Dissipation (Ta) — 2.5 W
Operating Junction Temperature — -55C to +150C

Datasheets & Resources

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