BSC093N15NS5ATMA1 vs BSC052N08NS5ATMA1 Comparison
Detailed side-by-side comparison of BSC093N15NS5ATMA1 by Infineon and BSC052N08NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC093N15NS5ATMA1 - 150V 9.3mΞ© 87A OptiMOS 5 N-MOSFET | Infineon
BSC093N15NS5ATMA1 β ActiveInfineon
BSC052N08NS5ATMA1
BSC052N08NS5ATMA1 - 80V 95A 5.2mΞ© OptiMOS 5 N-FET | Infineon
BSC052N08NS5ATMA1 β ActiveSpecification Comparison
| Parameter | BSC093N15NS5ATMA1 | BSC052N08NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.83 | $0.52 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOS 5 150V | OptiMOS 5 |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) Max | 150 V | β |
| Continuous Drain Current (ID) at TC | 87 A | β |
| Drain-Source On-Resistance (RDS(on)) Max at VGS=10V | 9.3 mΞ© | β |
| Power Dissipation (PD) at TC | 139 W | β |
| Package | SuperSO8 5x6 (PG-TDSON-8-7) | PG-TDSON-8 (SuperSO8) 5x6 mm |
| Mounting Type | Surface Mount | Surface Mount |
| Gate Drive Voltage (VGS) Recommended | 10 V | β |
| Operating Temperature Range | [DATA_NEEDED: operating temperature range] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge Qg] | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL level] | 1 (unlimited) |
| Halogen Free | [DATA_NEEDED: halogen free status] | β |
| Part Number | β | BSC052N08NS5ATMA1 |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 80 V |
| Continuous Drain Current (ID, Tc) | β | 95 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | β | 5.2 mΞ© |
| Gate-Source Voltage (VGS) | β | Β±20 V |
| Gate Threshold Voltage VGS(th) typ | β | 2.5-3.0 V |
| Total Power Dissipation (Tc) | β | 83 W |
| Total Power Dissipation (Ta) | β | 2.5 W |
| Operating Junction Temperature | β | -55C to +150C |