BSC146N10LS5ATMA1 vs BSC027N10NS5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC146N10LS5ATMA1 disebabkan oleh Infineon dan BSC027N10NS5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSC146N10LS5ATMA1 BSC146N10LS5ATMA1 - 100V 44A OptiMOS 5 N-MOSFET | Infineon

BSC146N10LS5ATMA1 - 100V 44A OptiMOS 5 N-MOSFET | Infineon

BSC146N10LS5ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSC146N10LS5ATMA1 BSC027N10NS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif NRND
Technology OptiMOS 5 (logic-level) OptiMOS 5 (100V)
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) max 100 V —
Continuous Drain Current (ID) at Tc=25 C 44 A —
Pulsed Drain Current (ID,pulse) [DATA_NEEDED: IDM] —
RDS(on) max at VGS=10 V 14.6 mOhm —
RDS(on) max at VGS=4.5 V [DATA_NEEDED: RDS(on) at 4.5 V] —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) Logic-level (typ. ~1.7 V) —
Power Dissipation (Ta) 2.5 W 3 W
Power Dissipation (Tc) 52 W 214 W
Gambaran Suhu Operasi -55 C to +150 C (TJ max) [DATA_NEEDED: Tj min/max]
Kemasan PG-TDSON-8-6 (SuperSO8 5x6 mm) PG-TSON-8-3 (SuperSO8 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
Status RoHS Compliant Compliant
Avalanche Energy (EAS) [DATA_NEEDED: EAS] —
Manufacturer — Infineon Technologies
Part Number — BSC027N10NS5ATMA1
Channel Type — N-Channel
Drain-Source Voltage (VDS) — 100 V
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) at Ta — 23 A
Continuous Drain Current (ID) at Tc — 100 A
Pulsed Drain Current (IDM) — 194 A
On-Resistance RDS(on) Max at VGS=10V — 2.7 mOhm
Qualification — Industrial (AEC-Q101 variant BSC027N10NS5 exists separately)

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