BSC146N10LS5ATMA1 vs BSC027N10NS5ATMA1 Comparison

Detailed side-by-side comparison of BSC146N10LS5ATMA1 by Infineon and BSC027N10NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC146N10LS5ATMA1 BSC146N10LS5ATMA1 - 100V 44A OptiMOS 5 N-MOSFET | Infineon

BSC146N10LS5ATMA1 - 100V 44A OptiMOS 5 N-MOSFET | Infineon

BSC146N10LS5ATMA1 ✓ Active

Specification Comparison

Parameter BSC146N10LS5ATMA1 BSC027N10NS5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active NRND
Technology OptiMOS 5 (logic-level) OptiMOS 5 (100V)
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) max 100 V —
Continuous Drain Current (ID) at Tc=25 C 44 A —
Pulsed Drain Current (ID,pulse) [DATA_NEEDED: IDM] —
RDS(on) max at VGS=10 V 14.6 mOhm —
RDS(on) max at VGS=4.5 V [DATA_NEEDED: RDS(on) at 4.5 V] —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) Logic-level (typ. ~1.7 V) —
Power Dissipation (Ta) 2.5 W 3 W
Power Dissipation (Tc) 52 W 214 W
Operating Temperature Range -55 C to +150 C (TJ max) [DATA_NEEDED: Tj min/max]
Package PG-TDSON-8-6 (SuperSO8 5x6 mm) PG-TSON-8-3 (SuperSO8 5x6 mm)
Mounting Type Surface Mount Surface Mount
MSL Level 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
RoHS Status Compliant Compliant
Avalanche Energy (EAS) [DATA_NEEDED: EAS] —
Manufacturer — Infineon Technologies
Part Number — BSC027N10NS5ATMA1
Channel Type — N-Channel
Drain-Source Voltage (VDS) — 100 V
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) at Ta — 23 A
Continuous Drain Current (ID) at Tc — 100 A
Pulsed Drain Current (IDM) — 194 A
On-Resistance RDS(on) Max at VGS=10V — 2.7 mOhm
Qualification — Industrial (AEC-Q101 variant BSC027N10NS5 exists separately)

Datasheets & Resources

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