BSC146N10LS5ATMA1 vs BSC027N10NS5ATMA1 Comparison
Detailed side-by-side comparison of BSC146N10LS5ATMA1 by Infineon and BSC027N10NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC146N10LS5ATMA1
BSC146N10LS5ATMA1 - 100V 44A OptiMOS 5 N-MOSFET | Infineon
BSC146N10LS5ATMA1 β ActiveInfineon
BSC027N10NS5ATMA1
BSC027N10NS5ATMA1 - 100V 194A OptiMOS 5 N-MOSFET | Infineon
BSC027N10NS5ATMA1 NrndSpecification Comparison
| Parameter | BSC146N10LS5ATMA1 | BSC027N10NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Nrnd |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.74 | $1.10 |
| Technology | OptiMOS 5 (logic-level) | OptiMOS 5 (100V) |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) max | 100 V | β |
| Continuous Drain Current (ID) at Tc=25 C | 44 A | β |
| Pulsed Drain Current (ID,pulse) | [DATA_NEEDED: IDM] | β |
| RDS(on) max at VGS=10 V | 14.6 mOhm | β |
| RDS(on) max at VGS=4.5 V | [DATA_NEEDED: RDS(on) at 4.5 V] | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Gate Threshold Voltage (VGS(th)) | Logic-level (typ. ~1.7 V) | β |
| Power Dissipation (Ta) | 2.5 W | 3 W |
| Power Dissipation (Tc) | 52 W | 214 W |
| Operating Temperature Range | -55 C to +150 C (TJ max) | [DATA_NEEDED: Tj min/max] |
| Package | PG-TDSON-8-6 (SuperSO8 5x6 mm) | PG-TSON-8-3 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| RoHS Status | Compliant | Compliant |
| Avalanche Energy (EAS) | [DATA_NEEDED: EAS] | β |
| Manufacturer | β | Infineon Technologies |
| Part Number | β | BSC027N10NS5ATMA1 |
| Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 100 V |
| Gate-Source Voltage (VGS) Max | β | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) at Ta | β | 23 A |
| Continuous Drain Current (ID) at Tc | β | 100 A |
| Pulsed Drain Current (IDM) | β | 194 A |
| On-Resistance RDS(on) Max at VGS=10V | β | 2.7 mOhm |
| Qualification | β | Industrial (AEC-Q101 variant BSC027N10NS5 exists separately) |