BSC146N10LS5ATMA1 vs BSC027N10NS5ATMA1 比較

詳細並排比較 BSC146N10LS5ATMA1 由 Infineon 與 BSC027N10NS5ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSC146N10LS5ATMA1 BSC146N10LS5ATMA1 - 100V 44A OptiMOS 5 N-MOSFET | Infineon

BSC146N10LS5ATMA1 - 100V 44A OptiMOS 5 N-MOSFET | Infineon

BSC146N10LS5ATMA1 ✓ 啟用中

規格比較

參數 BSC146N10LS5ATMA1 BSC027N10NS5ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 NRND
Technology OptiMOS 5 (logic-level) OptiMOS 5 (100V)
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) max 100 V —
Continuous Drain Current (ID) at Tc=25 C 44 A —
Pulsed Drain Current (ID,pulse) [DATA_NEEDED: IDM] —
RDS(on) max at VGS=10 V 14.6 mOhm —
RDS(on) max at VGS=4.5 V [DATA_NEEDED: RDS(on) at 4.5 V] —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) Logic-level (typ. ~1.7 V) —
Power Dissipation (Ta) 2.5 W 3 W
Power Dissipation (Tc) 52 W 214 W
工作溫度範圍 -55 C to +150 C (TJ max) [DATA_NEEDED: Tj min/max]
封裝 PG-TDSON-8-6 (SuperSO8 5x6 mm) PG-TSON-8-3 (SuperSO8 5x6 mm)
安裝類型 Surface Mount Surface Mount
MSL 等級 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
RoHS 狀態 Compliant Compliant
Avalanche Energy (EAS) [DATA_NEEDED: EAS] —
Manufacturer — Infineon Technologies
Part Number — BSC027N10NS5ATMA1
Channel Type — N-Channel
Drain-Source Voltage (VDS) — 100 V
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) at Ta — 23 A
Continuous Drain Current (ID) at Tc — 100 A
Pulsed Drain Current (IDM) — 194 A
On-Resistance RDS(on) Max at VGS=10V — 2.7 mOhm
Qualification — Industrial (AEC-Q101 variant BSC027N10NS5 exists separately)

資料表與資源

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