BSC155N06NDATMA1 vs BSC0501NSIATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC155N06NDATMA1 disebabkan oleh Infineon dan BSC0501NSIATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC155N06NDATMA1 BSC0501NSIATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon
Part Number BSC155N06NDATMA1 —
Technology OptiMOS 3 (N-channel trench) Trench-gate OptiMOS 5
Configuration Dual N-channel MOSFET array —
Drain-to-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at Tc=25C 20 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: IDM]
On-State Resistance RDS(on) max at VGS=10V 15.5 mOhm —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] [DATA_NEEDED: VGS(th) typical]
Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Gambaran Suhu Operasi -55 C to +175 C —
Kemasan PG-TDSON-8-4 (SuperSO8 5x6 mm) PG-TDSON-8-6 (SuperSO8)
Jenis Pemasangan Surface Mount Surface Mount
Power Dissipation (Tc=25C) 50 W —
Aras MSL 1 1 (per JEDEC J-STD-020)
Status RoHS Compliant (Pb-free plating) Compliant
Lead-Free Plating Yes —
Shoot-Through Immunity Qgd/Qgs < 0.8 —
Product Family — OptiMOS 5 25V/30V
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at Ta — 29 A
Continuous Drain Current (ID) at Tc — 100 A
Power Dissipation at Ta (PD) — 2.5 W
Power Dissipation at Tc (PD) — 50 W
Gate-Source Voltage (VGS) — ±20 V
On-Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) max at 10V VGS]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]
Suhu Hubungan Operasi — -55C to +150C
Avalanche Rated — Yes

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