BSC155N06NDATMA1 vs BSC0501NSIATMA1 比較
詳細並排比較 BSC155N06NDATMA1 由 Infineon 與 BSC0501NSIATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSC155N06NDATMA1 | BSC0501NSIATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon |
| Part Number | BSC155N06NDATMA1 | — |
| Technology | OptiMOS 3 (N-channel trench) | Trench-gate OptiMOS 5 |
| Configuration | Dual N-channel MOSFET array | — |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Tc=25C | 20 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: IDM] |
| On-State Resistance RDS(on) max at VGS=10V | 15.5 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | [DATA_NEEDED: VGS(th) typical] |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| 工作溫度範圍 | -55 C to +175 C | — |
| 封裝 | PG-TDSON-8-4 (SuperSO8 5x6 mm) | PG-TDSON-8-6 (SuperSO8) |
| 安裝類型 | Surface Mount | Surface Mount |
| Power Dissipation (Tc=25C) | 50 W | — |
| MSL 等級 | 1 | 1 (per JEDEC J-STD-020) |
| RoHS 狀態 | Compliant (Pb-free plating) | Compliant |
| Lead-Free Plating | Yes | — |
| Shoot-Through Immunity Qgd/Qgs | < 0.8 | — |
| Product Family | — | OptiMOS 5 25V/30V |
| 電晶體類型 | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at Ta | — | 29 A |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Power Dissipation at Ta (PD) | — | 2.5 W |
| Power Dissipation at Tc (PD) | — | 50 W |
| Gate-Source Voltage (VGS) | — | ±20 V |
| On-Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) max at 10V VGS] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| 工作接面溫度 | — | -55C to +150C |
| Avalanche Rated | — | Yes |