BSC190N15NS3GATMA1 vs BSC12DN20NS3GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC190N15NS3GATMA1 disebabkan oleh Infineon dan BSC12DN20NS3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC190N15NS3GATMA1 BSC12DN20NS3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS 3 (N-Channel) OptiMOS power MOSFET
Drain-Source Voltage (VDS) 150 V 200 V
Continuous Drain Current (ID) at Tc=25C 50 A —
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) max 20 V —
Gate Threshold Voltage (VGS(th)) 2.5 V to 3.5 V [DATA_NEEDED: gate threshold typical]
On-Resistance RDS(on) max at VGS=10V 19 mOhm —
On-Resistance RDS(on) typ at VGS=10V [DATA_NEEDED: RDS(on) typical at 10V] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Power Dissipation (PD) at Tc=25C 125 W —
Gambaran Suhu Operasi -55 C to +150 C [DATA_NEEDED: operating temperature range]
Kemasan PG-TDSON-8-1 (TDSON-8 EP) PG-TDSON-8-5
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant Compliant
Aras MSL 1 1 (per JEDEC J-STD-020)
Manufacturer — Infineon Technologies
Product Family — OptiMOS 200V
Jenis Transistor — N-Channel MOSFET
Continuous Drain Current (ID, Tc) — 11.3 A
Power Dissipation (PD, Tc) — 50 W
On-Resistance RDS(on) — [DATA_NEEDED: RDS(on) at VGS=10V]
Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Configuration — Single N-channel
Kiraan Pin — 8

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