BSC190N15NS3GATMA1 vs BSC12DN20NS3GATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC190N15NS3GATMA1 sa pamamagitan ng Infineon at BSC12DN20NS3GATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro BSC190N15NS3GATMA1 BSC12DN20NS3GATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Technology OptiMOS 3 (N-Channel) OptiMOS power MOSFET
Drain-Source Voltage (VDS) 150 V 200 V
Continuous Drain Current (ID) at Tc=25C 50 A —
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) max 20 V —
Gate Threshold Voltage (VGS(th)) 2.5 V to 3.5 V [DATA_NEEDED: gate threshold typical]
On-Resistance RDS(on) max at VGS=10V 19 mOhm —
On-Resistance RDS(on) typ at VGS=10V [DATA_NEEDED: RDS(on) typical at 10V] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Power Dissipation (PD) at Tc=25C 125 W —
Hanay ng Temperature na Operasyon -55 C to +150 C [DATA_NEEDED: operating temperature range]
Packhaging PG-TDSON-8-1 (TDSON-8 EP) PG-TDSON-8-5
Uri ng Pagpapasok Surface Mount Surface Mount
Tindminan RoHS Compliant Compliant
Level ng MSL 1 1 (per JEDEC J-STD-020)
Manufacturer — Infineon Technologies
Product Family — OptiMOS 200V
Uri ng Transistor — N-Channel MOSFET
Continuous Drain Current (ID, Tc) — 11.3 A
Power Dissipation (PD, Tc) — 50 W
On-Resistance RDS(on) — [DATA_NEEDED: RDS(on) at VGS=10V]
Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Configuration — Single N-channel
Bilang ng Pin — 8

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