BSC190N15NS3GATMA1 vs BSC360N15NS3GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC190N15NS3GATMA1 disebabkan oleh Infineon dan BSC360N15NS3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC190N15NS3GATMA1 BSC360N15NS3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS 3 (N-Channel) OptiMOS 3 (N-Channel Trench MOSFET)
Drain-Source Voltage (VDS) 150 V 150 V
Continuous Drain Current (ID) at Tc=25C 50 A —
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) max 20 V —
Gate Threshold Voltage (VGS(th)) 2.5 V to 3.5 V —
On-Resistance RDS(on) max at VGS=10V 19 mOhm 36 mOhm
On-Resistance RDS(on) typ at VGS=10V [DATA_NEEDED: RDS(on) typical at 10V] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Power Dissipation (PD) at Tc=25C 125 W —
Gambaran Suhu Operasi -55 C to +150 C -55°C to +150°C (junction)
Kemasan PG-TDSON-8-1 (TDSON-8 EP) PG-TDSON-8-1 (SuperSO8, 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant Compliant
Aras MSL 1 1
Manufacturer — Infineon Technologies
Part Number — BSC360N15NS3GATMA1
Continuous Drain Current (ID) at Tc — 33 A
Power Dissipation (PD) at Tc — 74 W
Gate Threshold Voltage (VGS th) typ — 3.0 V
Total Gate Charge (Qg) typ — [DATA_NEEDED: Qg value]
Avalanche Energy Rated — Yes
Lead-Free — Yes

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga