BSC190N15NS3GATMA1 vs BSC360N15NS3GATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC190N15NS3GATMA1 sa pamamagitan ng Infineon at BSC360N15NS3GATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro BSC190N15NS3GATMA1 BSC360N15NS3GATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Technology OptiMOS 3 (N-Channel) OptiMOS 3 (N-Channel Trench MOSFET)
Drain-Source Voltage (VDS) 150 V 150 V
Continuous Drain Current (ID) at Tc=25C 50 A —
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) max 20 V —
Gate Threshold Voltage (VGS(th)) 2.5 V to 3.5 V —
On-Resistance RDS(on) max at VGS=10V 19 mOhm 36 mOhm
On-Resistance RDS(on) typ at VGS=10V [DATA_NEEDED: RDS(on) typical at 10V] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Power Dissipation (PD) at Tc=25C 125 W —
Hanay ng Temperature na Operasyon -55 C to +150 C -55°C to +150°C (junction)
Packhaging PG-TDSON-8-1 (TDSON-8 EP) PG-TDSON-8-1 (SuperSO8, 5x6 mm)
Uri ng Pagpapasok Surface Mount Surface Mount
Tindminan RoHS Compliant Compliant
Level ng MSL 1 1
Manufacturer — Infineon Technologies
Part Number — BSC360N15NS3GATMA1
Continuous Drain Current (ID) at Tc — 33 A
Power Dissipation (PD) at Tc — 74 W
Gate Threshold Voltage (VGS th) typ — 3.0 V
Total Gate Charge (Qg) typ — [DATA_NEEDED: Qg value]
Avalanche Energy Rated — Yes
Lead-Free — Yes

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