BSC190N15NS3GATMA1 vs IPP075N15N3GXKSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC190N15NS3GATMA1 disebabkan oleh Infineon dan IPP075N15N3GXKSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC190N15NS3GATMA1 IPP075N15N3GXKSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS 3 (N-Channel) N-Channel MOSFET (OptiMOS 3)
Drain-Source Voltage (VDS) 150 V 150 V
Continuous Drain Current (ID) at Tc=25C 50 A —
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) max 20 V —
Gate Threshold Voltage (VGS(th)) 2.5 V to 3.5 V —
On-Resistance RDS(on) max at VGS=10V 19 mOhm —
On-Resistance RDS(on) typ at VGS=10V [DATA_NEEDED: RDS(on) typical at 10V] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] [DATA_NEEDED: total gate charge]
Power Dissipation (PD) at Tc=25C 125 W —
Gambaran Suhu Operasi -55 C to +150 C [DATA_NEEDED: junction operating temperature range]
Kemasan PG-TDSON-8-1 (TDSON-8 EP) PG-TO220-3 (TO-220 through-hole)
Jenis Pemasangan Surface Mount Through Hole
Status RoHS Compliant —
Aras MSL 1 —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 3
Continuous Drain Current (ID, Tc=25C) — 100 A
Power Dissipation (PD, Tc=25C) — 300 W
On-State Resistance (RDS(on) max, VGS=10V) — 7.5 mOhm
Gate-Source Voltage (VGS) — [DATA_NEEDED: gate-source voltage absolute max]
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typical]
Lead-Free / RoHS — RoHS Compliant
Ordering Code Suffix — GXKSA1 (Tube pack, RoHS compliant)

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