BSC360N15NS3GATMA1 vs BSC190N15NS3GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC360N15NS3GATMA1 disebabkan oleh Infineon dan BSC190N15NS3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC360N15NS3GATMA1 BSC190N15NS3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number BSC360N15NS3GATMA1 —
Technology OptiMOS 3 (N-Channel Trench MOSFET) OptiMOS 3 (N-Channel)
Drain-Source Voltage (VDS) 150 V 150 V
Continuous Drain Current (ID) at Tc 33 A —
On-Resistance RDS(on) max at VGS=10V 36 mOhm 19 mOhm
Power Dissipation (PD) at Tc 74 W —
Gate Threshold Voltage (VGS th) typ 3.0 V —
Total Gate Charge (Qg) typ [DATA_NEEDED: Qg value] —
Kemasan PG-TDSON-8-1 (SuperSO8, 5x6 mm) PG-TDSON-8-1 (TDSON-8 EP)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55°C to +150°C (junction) -55 C to +150 C
Avalanche Energy Rated Yes —
Status RoHS Compliant Compliant
Lead-Free Yes —
Aras MSL 1 1
Continuous Drain Current (ID) at Tc=25C — 50 A
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at Tc=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max — 20 V
Gate Threshold Voltage (VGS(th)) — 2.5 V to 3.5 V
On-Resistance RDS(on) typ at VGS=10V — [DATA_NEEDED: RDS(on) typical at 10V]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Power Dissipation (PD) at Tc=25C — 125 W

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