BSC360N15NS3GATMA1 vs BSC190N15NS3GATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC360N15NS3GATMA1 sa pamamagitan ng Infineon at BSC190N15NS3GATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSC360N15NS3GATMA1 - 150V 36mOhm N-Channel OptiMOS MOSFET | Infineon
BSC360N15NS3GATMA1 ✓ NakahandaInfineon
BSC190N15NS3GATMA1 - 150V 50A N-Channel OptiMOS 3 MOSFET | Infineon
BSC190N15NS3GATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSC360N15NS3GATMA1 | BSC190N15NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSC360N15NS3GATMA1 | — |
| Technology | OptiMOS 3 (N-Channel Trench MOSFET) | OptiMOS 3 (N-Channel) |
| Drain-Source Voltage (VDS) | 150 V | 150 V |
| Continuous Drain Current (ID) at Tc | 33 A | — |
| On-Resistance RDS(on) max at VGS=10V | 36 mOhm | 19 mOhm |
| Power Dissipation (PD) at Tc | 74 W | — |
| Gate Threshold Voltage (VGS th) typ | 3.0 V | — |
| Total Gate Charge (Qg) typ | [DATA_NEEDED: Qg value] | — |
| Packhaging | PG-TDSON-8-1 (SuperSO8, 5x6 mm) | PG-TDSON-8-1 (TDSON-8 EP) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -55°C to +150°C (junction) | -55 C to +150 C |
| Avalanche Energy Rated | Yes | — |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Level ng MSL | 1 | 1 |
| Continuous Drain Current (ID) at Tc=25C | — | 50 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | — | 20 V |
| Gate Threshold Voltage (VGS(th)) | — | 2.5 V to 3.5 V |
| On-Resistance RDS(on) typ at VGS=10V | — | [DATA_NEEDED: RDS(on) typical at 10V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at Tc=25C | — | 125 W |