BSC360N15NS3GATMA1 vs BSC265N10LSFGATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC360N15NS3GATMA1 disebabkan oleh Infineon dan BSC265N10LSFGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC360N15NS3GATMA1 BSC265N10LSFGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number BSC360N15NS3GATMA1 —
Technology OptiMOS 3 (N-Channel Trench MOSFET) OptiMOS 2 (TrenchFET)
Drain-Source Voltage (VDS) 150 V 100 V
Continuous Drain Current (ID) at Tc 33 A —
On-Resistance RDS(on) max at VGS=10V 36 mOhm —
Power Dissipation (PD) at Tc 74 W —
Gate Threshold Voltage (VGS th) typ 3.0 V —
Total Gate Charge (Qg) typ [DATA_NEEDED: Qg value] —
Kemasan PG-TDSON-8-1 (SuperSO8, 5x6 mm) PG-TDSON-8-1 (TDSON-8)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55°C to +150°C (junction) -55 C to +150 C (junction)
Avalanche Energy Rated Yes —
Status RoHS Compliant Compliant
Lead-Free Yes Yes
Aras MSL 1 1 (per JEDEC J-STD-020)
FET Type — N-Channel
Continuous Drain Current (ID, Tc) — 40 A
Continuous Drain Current (ID, Ta) — 6.5 A
Power Dissipation (PD, Tc) — 78 W
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min]
On-State Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) max at VGS=10V]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg total at VGS=10V]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss typical]
Avalanche Rated — Yes
Series — OptiMOS 2

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