BSC360N15NS3GATMA1 vs BSC265N10LSFGATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC360N15NS3GATMA1 sa pamamagitan ng Infineon at BSC265N10LSFGATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro BSC360N15NS3GATMA1 BSC265N10LSFGATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Part Number BSC360N15NS3GATMA1 —
Technology OptiMOS 3 (N-Channel Trench MOSFET) OptiMOS 2 (TrenchFET)
Drain-Source Voltage (VDS) 150 V 100 V
Continuous Drain Current (ID) at Tc 33 A —
On-Resistance RDS(on) max at VGS=10V 36 mOhm —
Power Dissipation (PD) at Tc 74 W —
Gate Threshold Voltage (VGS th) typ 3.0 V —
Total Gate Charge (Qg) typ [DATA_NEEDED: Qg value] —
Packhaging PG-TDSON-8-1 (SuperSO8, 5x6 mm) PG-TDSON-8-1 (TDSON-8)
Uri ng Pagpapasok Surface Mount Surface Mount
Hanay ng Temperature na Operasyon -55°C to +150°C (junction) -55 C to +150 C (junction)
Avalanche Energy Rated Yes —
Tindminan RoHS Compliant Compliant
Lead-Free Yes Yes
Level ng MSL 1 1 (per JEDEC J-STD-020)
FET Type — N-Channel
Continuous Drain Current (ID, Tc) — 40 A
Continuous Drain Current (ID, Ta) — 6.5 A
Power Dissipation (PD, Tc) — 78 W
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min]
On-State Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) max at VGS=10V]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg total at VGS=10V]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss typical]
Avalanche Rated — Yes
Series — OptiMOS 2

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita