BSD214SNH6327XTSA1 vs BSP92PH6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSD214SNH6327XTSA1 disebabkan oleh Infineon dan BSP92PH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSD214SNH6327XTSA1 BSP92PH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology MOSFET (Metal Oxide), OptiMOS —
Drain-to-Source Voltage (Vdss) 20 V —
Continuous Drain Current (Id) at 25C 1.5 A —
Power Dissipation (Pd) at Ta 500 mW —
Gate Drive Voltage (Rds On rated) 2.5 V, 4.5 V —
Rds On (Max) @ Vgs=4.5V [DATA_NEEDED: Rds On at Vgs=4.5V] —
Rds On (Max) @ Vgs=2.5V [DATA_NEEDED: Rds On at Vgs=2.5V] —
Vgs(th) (typical) [DATA_NEEDED: Vgs threshold typical] —
Kemasan SOT-363 (PG-SOT363-PO), 6-pin PG-SOT223-4 (SOT-223-4)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55C to +150C (junction) —
Automotive Qualification AEC-Q101 qualified —
Lead Plating Pb-free —
Status RoHS Compliant —
Aras MSL 1 1 (unlimited)
Standard Pack Quantity 3000 (Tape & Reel) —
Manufacturer — Infineon Technologies
Product Family — OptiMOS P-Channel Small-Signal Power MOSFET
Jenis Transistor — P-Channel Enhancement Mode MOSFET
Drain-Source Voltage (VDS) — -250 V
Continuous Drain Current (ID) — -260 mA (Ta)
Power Dissipation (PD) — 1.8 W (Ta)
Channel Polarity — P-Channel
Suhu Operasi — -55C to +150C (Tj)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical and min/max]
On-State Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=-10V]
Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Lead-Free / RoHS — Yes / Compliant
Kiraan Pin — 4 (Gate, Drain, Drain, Source)

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga