BSD214SNH6327XTSA1 vs BSP92PH6327XTSA1 比較

詳細並排比較 BSD214SNH6327XTSA1 由 Infineon 與 BSP92PH6327XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSD214SNH6327XTSA1 BSD214SNH6327XTSA1 - 20V N-Ch OptiMOS 1.5A | Infineon SOT-363

BSD214SNH6327XTSA1 - 20V N-Ch OptiMOS 1.5A | Infineon SOT-363

BSD214SNH6327XTSA1 ✓ 啟用中

規格比較

參數 BSD214SNH6327XTSA1 BSP92PH6327XTSA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel —
Technology MOSFET (Metal Oxide), OptiMOS —
Drain-to-Source Voltage (Vdss) 20 V —
Continuous Drain Current (Id) at 25C 1.5 A —
Power Dissipation (Pd) at Ta 500 mW —
Gate Drive Voltage (Rds On rated) 2.5 V, 4.5 V —
Rds On (Max) @ Vgs=4.5V [DATA_NEEDED: Rds On at Vgs=4.5V] —
Rds On (Max) @ Vgs=2.5V [DATA_NEEDED: Rds On at Vgs=2.5V] —
Vgs(th) (typical) [DATA_NEEDED: Vgs threshold typical] —
封裝 SOT-363 (PG-SOT363-PO), 6-pin PG-SOT223-4 (SOT-223-4)
安裝類型 Surface Mount Surface Mount
工作溫度範圍 -55C to +150C (junction) —
Automotive Qualification AEC-Q101 qualified —
Lead Plating Pb-free —
RoHS 狀態 Compliant —
MSL 等級 1 1 (unlimited)
Standard Pack Quantity 3000 (Tape & Reel) —
Manufacturer — Infineon Technologies
Product Family — OptiMOS P-Channel Small-Signal Power MOSFET
電晶體類型 — P-Channel Enhancement Mode MOSFET
Drain-Source Voltage (VDS) — -250 V
Continuous Drain Current (ID) — -260 mA (Ta)
Power Dissipation (PD) — 1.8 W (Ta)
Channel Polarity — P-Channel
工作溫度 — -55C to +150C (Tj)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical and min/max]
On-State Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=-10V]
Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Lead-Free / RoHS — Yes / Compliant
腳位數 — 4 (Gate, Drain, Drain, Source)

資料表與資源

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