BSP135H6906XTSA1 vs BSD214SNH6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSP135H6906XTSA1 disebabkan oleh Infineon dan BSD214SNH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSP135H6906XTSA1 BSP135H6906XTSA1 - 600V N-Ch Depletion MOSFET | Infineon

BSP135H6906XTSA1 - 600V N-Ch Depletion MOSFET | Infineon

BSP135H6906XTSA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSP135H6906XTSA1 BSD214SNH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel Depletion Mode N-Channel
Drain-Source Voltage (VDS) Max 600 V —
Continuous Drain Current (ID) at TA=25C 120 mA —
RDS(on) Max at VGS=0V 45 Ohm —
Power Dissipation (PD) Max 1.8 W —
Gate-Source Voltage (VGS) Max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(off)) Depletion mode (normally-on) —
Gambaran Suhu Operasi -55C to +150C -55C to +150C (junction)
Kemasan PG-SOT223-4 (SOT-223, 3+tab) SOT-363 (PG-SOT363-PO), 6-pin
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 4 (3 leads + drain tab) —
Technology SIPMOS (planar high-voltage) MOSFET (Metal Oxide), OptiMOS
Aras MSL 1 (unlimited) 1
Status RoHS Compliant Compliant
Automotive Qualification AEC-Q101 (per datasheets.com parametric record) AEC-Q101 qualified
Lead-Free Yes —
Drain-to-Source Voltage (Vdss) — 20 V
Continuous Drain Current (Id) at 25C — 1.5 A
Power Dissipation (Pd) at Ta — 500 mW
Gate Drive Voltage (Rds On rated) — 2.5 V, 4.5 V
Rds On (Max) @ Vgs=4.5V — [DATA_NEEDED: Rds On at Vgs=4.5V]
Rds On (Max) @ Vgs=2.5V — [DATA_NEEDED: Rds On at Vgs=2.5V]
Vgs(th) (typical) — [DATA_NEEDED: Vgs threshold typical]
Lead Plating — Pb-free
Standard Pack Quantity — 3000 (Tape & Reel)

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga